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1 V-grooved (silicon) substrate
(кремнієва) підкладка з V-подібними канавкамиEnglish-Ukrainian dictionary of microelectronics > V-grooved (silicon) substrate
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2 V-grooved (silicon) substrate
(кремнієва) підкладка з V-подібними канавкамиEnglish-Ukrainian dictionary of microelectronics > V-grooved (silicon) substrate
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3 substrate
підкладка; основа - amorphous insulating substrate
- blank substrate
- bulk substrate
- composite substrate
- compound semiconductor substrate
- dislocation-free substrate
- foreign substrate
- garnet substrate
- glass-сеramic substrate
- glazed substrate
- high-resistivity substrate
- implanted substrate
- insulative substrate
- interconnection substrate
- ion-milled substrate
- low-resistivity substrate
- mask substrate
- MP substrate
- multilayer substrate
- multilayer printed substrate
- n-typesubstrate
- nsubstrate
- passive substrate
- porcelainized steel substrate
- porous polishing substrate
- preloaded substrate
- prescreened substrate
- pretinned substrate
- printed-wiring substrate
- p-type substrate
- silicon through-hole substrate
- SOI substrate
- SOS substrate
- stepless substrate
- thick-film multilevel substrate
- thick-film screened substrate
- thin-film substrate
- V-grooved silicon substrate
- V-grooved substrate
- wiring substrateEnglish-Ukrainian dictionary of microelectronics > substrate
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4 silicon through-hole substrate
кремнієва підкладка з крізними отворамиEnglish-Ukrainian dictionary of microelectronics > silicon through-hole substrate
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5 technolog/y
1) технологія (див. т-ж арproach, technique) 2) техніки - advanced technolog/y
- alignment technolog/y
- analog technolog/y
- baseline technolog/y
- basic technolog/y
- batch technolog/y
- beam-tape technolog/y
- bi-FET technolog/y
- bi-MOS technolog/y
- BIMOS technolog/y
- bipolar technolog/y
- bit-slice technolog/y
- beardless technolog/y
- BSA technolog/y
- bubble technolog/y
- bumping technolog/y
- CAD technolog/yies
- CCD technolog/y
- cell array technolog/y
- cermet technolog/y
- CMOS technolog/y
- coating technolog/y
- cryogenic technolog/y
- current technolog/y
- custom-design technolog/y
- deep-ultraviolet photolithographic technolog/y
- dense LSI technolog/y
- diffused epitaxial planar technolog/y
- diffusion technolog/y
- digital technolog/y
- dominant technolog/y
- dry technolog/y
- dry chemical etching technolog/y
- ECL technolog/y
- electron technolog/y
- electron-beam exposure technolog/y
- electron-parts technolog/y
- electro-optical technolog/y
- epibase technolog/y
- epiplanar technolog/y
- epitaxial planar technolog/y
- film-carrier technolog/y
- fine-line technolog/y
- flip-chip bonding technolog/y
- flip-chip technolog/y
- full-slice technolog/y
- fuse-link technolog/y
- fusible-link technolog/y
- gallium arsenide technolog/y
- gate-array technolog/y
- high technolog/y
- high-density technolog/y
- high-electron mobility transistor technolog/y
- “high-end” technolog/y
- high-speed technolog/y
- hybrid technolog/y
- industry-standard MOS technolog/y
- information technolog/y
- inner-lead bonding technolog/y
- integration technolog/y
- interconnection technolog/y
- isoplanar technolog/y
- J-FET technolog/y
- Josephson-junctiontechnolog/y
- Josephsontechnolog/y
- leading-edge technolog/y
- lithographic technolog/y
- logic technolog/y
- low technolog/y
- “low-end” technolog/y
- low-power technolog/y
- magnetic-bubble technolog/y
- mainstream technolog/y
- mask-fabrication technolog/y
- master-slice technolog/y
- merged bipolar technolog/y
- merged technolog/y
- metal-board technolog/y
- metallization technolog/y
- microcircuit technolog/y
- microelectronic technolog/y
- microsystems technolog/y MST
- microsystems technolog/y
- MIS technolog/y
- mixed technolog/y
- monolithic technolog/y
- MOS technolog/y
- MTL technolog/y
- multilayer-wiring technolog/y
- multiple-epitaxial planar technolog/y
- n-channel technolog/y
- optical lithographic technolog/y
- oxide-isolated monolithic technolog/y
- passivation technolog/y
- p-channel technolog/y
- p-channel Si-gate technolog/y
- photofabrication technolog/y
- planar fabrication technolog/y
- planar technolog/y
- plasma technolog/y
- plating technolog/y
- polysilicon-gate technolog/y
- polysilicon-load technolog/y
- polysilicon self-aligned PSA technolog/y
- polysilicon self-aligned technolog/y
- resistless etching technolog/y
- robotic technolog/y
- scaled process technolog/y
- scaled technolog/y
- Schottky transistor logic technolog/y
- Schottky TTL technolog/y
- screen-and-fire technolog/y
- self-aligned source-drain diffusion technolog/y
- shared silicon technolog/y
- silicide-gate technolog/y
- silicon technolog/y
- silicon-gate technolog/y
- silicon-in-insulator technolog/y
- silicon-in-sapphire technolog/y
- silicon-on-insulator technolog/y
- silicon-on-sapphire technolog/y
- silicon wafer technolog/y
- single-diffused planar technolog/y
- single-diffused technolog/y
- solid-state technolog/y
- spider-bonding technolog/y
- standard bipolar technolog/y
- submicron IC technolog/y
- submicron technolog/y
- subnanosecond technolog/y
- substrate technolog/y
- subtractive technolog/y
- superconducting technolog/y
- surface-mount technolog/y
- system technolog/y
- TAB technolog/y
- tape-automated-bonding technolog/y
- tape bumping technolog/y
- thick-film multilayer technolog/y
- thick-film hybrid technolog/y
- thin-film technolog/y
- trench technolog/y
- trench isolation technolog/y
- TTL technolog/y
- ULA technolog/y
- ultraviolet photolithography technolog/y
- unipolar technolog/y
- V-groove technolog/y
- VHSIC technolog/y
- wafer bumping technolog/y
- water treatment technolog/y
- wiring technolog/y
- X-ray technolog/yEnglish-Ukrainian dictionary of microelectronics > technolog/y
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6 structure
1. ім. структура; конструкція 2. дієсл. формувати структуру - array structure
- band structure
- basic structure
- bilevel structure
- bipolar structure
- bridge structure
- charge-coupled device structure
- charge-coupled structure
- charge-transfer device structure
- charge-transfer structure
- chip structure
- CMOS structure
- contiguous-disk propagating structure
- data structure
- delta-type doping structure
- disordered structure
- double-barrier parabolic well structure
- double-implanted structure
- functional structure
- gate structure
- graded structure
- heterogeneous structure
- heterojunction structure
- homogeneous structure
- implanted structure
- insulated substrate structure
- integrated circuit structure
- integrated structure
- interconnection structure
- interdigital collector structure
- interface structure
- isolation-moat structure
- Josephson-effect structure
- junction-isolated structure
- latchup resistant structure
- lateral structure
- lateral transistor structure
- lattice structure
- lattice-strained structure
- lead structure
- logic structure
- MAS structure
- mask structure
- merged structure
- mesa -type structure
- mesa structure
- MIM structure
- MIS structure
- MNOS structure
- monolithic-typestructure
- monolithicstructure
- MOS structure
- MSM structure
- MTOS structure
- multigate structure
- multilayer structure
- multilevel structure
- nonhomogeneous-base structure
- n-p-n structure
- nonresonant surface реriodical structure
- oxide-isolated structure
- pin structure
- planar structure
- planar superlattice structure
- p-n-p structure
- polycrystalline resistor structure
- propagating structure
- quantum-box structure
- quantum well structure
- quasi-one dimensional structure
- recessed structure
- regular crystal structure
- self-aligned gate structure
- self-registered gate structure
- semiconductor structure
- semi-ROX structure
- series-gated structure
- shallow chip structure
- shield structure
- short-channel device structure
- short-channel structure
- SIC structure
- silicide-on-polysilicon structure
- silicon-in-sapphire structure
- silicon-on- insulator structure
- silicon- insulator structure
- silicon-on-sapphire structure
- silicon-on-spinel structure
- silicon-over oxide-semiconductor structure
- single-crystal structure
- slow-wave structure
- sphalerite-type structure
- submicrometer structure
- superlattice structure
- surface periodical structure
- test structure
- tiered structure
- totally ordered structure
- trench structure
- trench-gate structure
- trench isolation structure
- triple-diffusion structure
- triple-poly structure
- twin-well structure
- ultra-small structure
- unipolar structure
- van der Pauw structure
- vertical injector structure
- vertically integrated structure
- V-groove structure
- wafer асceptance test structure
- wiring layer structure
- zinc blende structureEnglish-Ukrainian dictionary of microelectronics > structure
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7 interface
1 ім.1) межа розділу; поверхня розділу2) пристрій сполучення, інтерфейс; погоджуючий пристрій2. дієсл. сполучати; погоджувати - cassette-to-cassette interface
- compound-semiconductor interface
- defect-free interface
- deposit-substrate interface
- dielectric-semiconductor interface
- heterojunction interface
- junction interface
- magnetic tape interface
- man-machine interface
- network interface
- packet bus management interface
- p-n junction interface
- Schottky interface
- semiconductor interface
- silicon-silicon dioxide interface
- solid-liquid interface
- standard mechanical interfaceEnglish-Ukrainian dictionary of microelectronics > interface
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8 material
матеріал - acceptor material
- adulterated semiconductor material
- base material
- binding material
- brittle material
- bubble material
- carrier material
- cermet material
- coarse-featured resist material
- composite material
- compound semiconductor material
- conductivity-type imparting material
- contact material
- contrast enhancing material
- dopant masking material
- doped material
- doping material
- electronic material
- electron resist material
- encapsulating material
- encapsulation material
- epitaxial material
- etchant masking material
- etching material
- evaporated material
- evaporation material
- filler material
- film material
- fine-featured resist material
- foreign material
- fragile material
- group III-V compound semiconductor material
- heavily doped material
- high-resistivity material
- host material
- impurity material
- laminated material
- liquid-crystal material
- lowly doped material
- low-resistivity material
- LSCO material
- magnetostrictive material
- mask-forming material
- mask material
- mismatched materials
- molding material
- multilayer material
- negative-image material
- organosilicone material
- packaging material
- parent material
- patterned material
- photoresist material
- photoresponsive material
- photosensitive material
- piezoelectric material
- plastic material
- polycrystalline material
- positive-image material
- refractory material
- resist material
- resistive material
- semiconductive material
- semiconductor material
- semiconductor-glass composite material
- silicon-on-insulator material
- silicon-on-sapphire material
- Si-MBE material
- single-crystal material
- spinel material
- starting material
- stop-etch material
- substrate material
- superconducting material
- support material
- thallium-based material
- thixotropic material
- virgin material
- Y–Ba–Cu–O material
- Y1–Ba2–Cu3–O7-x material
- 1-2-3 material -
9 MOS
структура метал–оксид–напівпровідник, МОН-структура - aluminum-gate MOS
- avalanche-injection stacked gate MOS
- avalanche stacked gate MOS
- back-gate MOS
- bulk complementary MOS
- buried-channel MOS
- buried-oxide MOS
- clocked complementary MOS
- complementary symmetry MOS
- complementary MOS
- composite-gate MOS
- depletion MOS
- dielectric-insulated MOS
- dielectric-isolated MOS
- double-diffused MOS
- double-implanted MOS
- double-level polysilicon MOS
- elevated-electrode MOS
- enhancement MOS
- floating-gate MOS
- grooved-gate MOS
- high-threshold MOS
- high-voltage MOS
- ion-implanted MOS
- lateral-merged bipolar MOS
- low-threshold MOS
- merged MOS
- multigate MOS
- n-channelMOS
- nMOS
- p-channelMOS
- pMOS
- polycrystalline silicon-gate MOS
- quadruply self-aligned MOS
- refractory MOS
- resistive-gate MOS
- scaled MOS
- Schottky-barrier MOS
- self-aligned MOS
- silicon-gate MOS
- single-channel MOS
- single-poly gate MOS
- substrate-fed MOS
- vertical MOS
- V-groove MOS
- V-notch MOS -
10 slice
1. ім.1) напівпровідникова пластина2) кристал ІС3) секціонований мікропроцесор; розрядна секція ( в секціонованих мікропроцесорах)2. дієсл. розрізати напівпровідникові злитки на пластини - CMOS master slice
- edge-shapedslice
- edgeslice
- I2L slice
- master slice
- microprocessor slice
- prediffused wafer slice
- prediffused slice
- scored slice
- starting silicon slice
- substrate slice
См. также в других словарях:
silicon substrate — silicio padėklas statusas T sritis radioelektronika atitikmenys: angl. silicon base; silicon body; silicon substrate vok. Siliziumsubstrat, n rus. кремниевая подложка, f pranc. substrat de silicium, m … Radioelektronikos terminų žodynas
V-groove silicon substrate — silicio padėklas su V grioveliais statusas T sritis radioelektronika atitikmenys: angl. V groove silicon substrate vok. V Graben Siliziumsubstrat, n rus. кремниевая подложка с V образными канавками, f pranc. substrat en silicium à rainures en V,… … Radioelektronikos terminų žodynas
Silicon on insulator — technology (SOI) refers to the use of a layered silicon insulator silicon substrate in place of conventional silicon substrates in semiconductor manufacturing, especially microelectronics, to reduce parasitic device capacitance and thereby… … Wikipedia
Silicon photomultiplier — Silicon photomultipliers, often called SiPM in the literature, are semiconductor single photon sensitive devices built from an avalanche photodiode (APD) array on common Silicon substrate. The idea behind this device is the detection in… … Wikipedia
silicon base — silicio padėklas statusas T sritis radioelektronika atitikmenys: angl. silicon base; silicon body; silicon substrate vok. Siliziumsubstrat, n rus. кремниевая подложка, f pranc. substrat de silicium, m … Radioelektronikos terminų žodynas
silicon body — silicio padėklas statusas T sritis radioelektronika atitikmenys: angl. silicon base; silicon body; silicon substrate vok. Siliziumsubstrat, n rus. кремниевая подложка, f pranc. substrat de silicium, m … Radioelektronikos terminų žodynas
Silicon on sapphire — (SOS) is a hetero epitaxial process for integrated circuit manufacturing that consists of a thin layer (typically thinner than 0.6 micrometres) of silicon grown on a sapphire (Al2O3) wafer. SOS is part of the Silicon on Insulator (SOI) family of… … Wikipedia
Silicon carbide — Chembox new Name = Silicon carbide ImageFile = Silicon carbide 3D balls.png ImageSize = 140px ImageName = Ball and stick model of part of a crystal of SiC ImageFile1 = silicon carbide detail.jpg ImageSize1 = 140px OtherNames = Section1 = Chembox… … Wikipedia
Substrate coupling — In an integrated circuit, a signal can couple from one node to another via the substrate. This phenomenon is referred to as substrate coupling or substrate noise coupling.The push for reduced cost, more compact circuit boards, and added customer… … Wikipedia
silicon-on-insulator substrate — dielektrinis silicio sluoksniu dengtas padėklas statusas T sritis radioelektronika atitikmenys: angl. silicon on insulator substrate vok. Silizium auf Dielektrikum Substrat, n rus. диэлектрическая подложка со слоем кремния, f pranc. substrat à… … Radioelektronikos terminų žodynas
silicon-on-sapphire substrate — silicio sluoksniu dengtas safyro padėklas statusas T sritis radioelektronika atitikmenys: angl. silicon on sapphire substrate vok. Silizium auf Saphir Substrat, n rus. сапфировая подложка с слоем кремния, f pranc. substrat à structure silicium… … Radioelektronikos terminų žodynas