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1 refractory MOS
МОН-структура із затвором з тугоплавкого металуEnglish-Ukrainian dictionary of microelectronics > refractory MOS
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2 MOS
структура метал–оксид–напівпровідник, МОН-структура - aluminum-gate MOS
- avalanche-injection stacked gate MOS
- avalanche stacked gate MOS
- back-gate MOS
- bulk complementary MOS
- buried-channel MOS
- buried-oxide MOS
- clocked complementary MOS
- complementary symmetry MOS
- complementary MOS
- composite-gate MOS
- depletion MOS
- dielectric-insulated MOS
- dielectric-isolated MOS
- double-diffused MOS
- double-implanted MOS
- double-level polysilicon MOS
- elevated-electrode MOS
- enhancement MOS
- floating-gate MOS
- grooved-gate MOS
- high-threshold MOS
- high-voltage MOS
- ion-implanted MOS
- lateral-merged bipolar MOS
- low-threshold MOS
- merged MOS
- multigate MOS
- n-channelMOS
- nMOS
- p-channelMOS
- pMOS
- polycrystalline silicon-gate MOS
- quadruply self-aligned MOS
- refractory MOS
- resistive-gate MOS
- scaled MOS
- Schottky-barrier MOS
- self-aligned MOS
- silicon-gate MOS
- single-channel MOS
- single-poly gate MOS
- substrate-fed MOS
- vertical MOS
- V-groove MOS
- V-notch MOS -
3 refractory metal (MOS) process
технологія МОН ІС із затворами з тугоплавкого металуEnglish-Ukrainian dictionary of microelectronics > refractory metal (MOS) process
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4 refractory metal (MOS) process
технологія МОН ІС із затворами з тугоплавкого металуEnglish-Ukrainian dictionary of microelectronics > refractory metal (MOS) process
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5 process
1. ім.1) процес; (технологічний) метод, спосіб2) технологія (див. т-ж technique, technology)3) (технологічна) обробка; технологічна операція2. дієсл. обробляти; проводити технологічну операцію - all-ion-implant process
- all-planar process
- Auger process
- batch process
- BH bias and hardness process
- BH process
- bonding process
- BOX process
- bulk CMOS process
- bumping process
- chip-on-board process
- closed CMOS process
- CMOS-on-sapphire process
- composite сеll logic process
- contact process
- conventional process
- deep охide isolation process
- DIFET process
- diffused eutectic aluminum process
- direct synthesis and crystal pull process
- double-diffused process
- double ion-implanted process
- double-layer polysilicon gate MOS process
- double-layer polysilicon gate process
- epitaxial deposition process
- epitaxial process
- epitaxial growth process
- flip-over process
- floating-gate silicon process
- front-end process
- gold-doped process
- guard-banded CMOS process
- heterogeneous process
- high-voltage process
- HMOS process
- imaging process
- implantation process
- in-house process
- interconnection process
- inverted meniscus process
- ion plating process
- isoplanar -S, -Z, -2 process
- isoplanar process
- junction-isolated process
- laser-recrystallized process
- lithographic process
- low-pressure process
- low VT process
- lost wafer process
- major process
- masking process
- master slice process
- mesa-isolation process
- metal-gate MOS process
- metal-gate process
- microbipolar LSI process
- micrometer-dimension process
- mid-film process
- Minimod process
- Mo-gate MOS process
- Mo-gate process
- nitride process
- nitrideless process
- NSA process
- oxide-film isolation process
- oxide isolated process
- oxygen refilling process
- patterning process
- phosphorous buried-emitter process
- photoablative process
- photolithography process
- photoresist process
- planar oxidation process
- Planox process
- plasma etch process
- Poly I process
- Poly II process
- Poly 5 process
- poly-oxide process
- Poly-Si process
- polysilicon-gate process
- poly-squared MOS process
- proprietary process
- PSA bipolar process
- PSA process
- refractory metal MOS process
- refractory metal process
- sacrificial охide process
- sapphire dielectric isolation process
- scaled Poly 5 process
- screen-and-fire process
- selective field-охidation process
- self-aligned gate process
- self-aligned process
- self-registered gate process
- self-registered process
- semi-additive process
- semiconductor-thermoplastic-dielectric process
- semicustom process
- shadow masking process
- silk-screen process
- single poly process
- SMOS process
- SOS/CMOS process
- stacked fuse bipolar process
- Stalicide process
- step-and-repeat process
- subtractive-fabrication process
- surface process
- Telemos process
- thermal process
- thermally асtivated surface process
- thermal-охidation process
- three-mask process
- triple-diffused process
- triply-poly process
- twin-tub process
- twin-well process
- V-groove MOS process
- V-groove process
- wet process
- 3-D process -
6 gate
1. ім.1)логічний елемент; вентиль; логічна схема2) затвор (напр. польового транзистора); керуючий електрод3) пост; робоче місце4) селекторний [стробуючий] імпульс, строб-імпульс2. дієсл. здійснювати селекцію в часі, стробувати - AND gate
- AND–NOR gate
- AND-NOT gate
- AND-OR gate
- back gate
- Boolean gate
- channelless sea gates
- closed-geometry gate
- coincidence gate
- control gate
- digital logic gate
- digital summation threshold logic gate
- discrete gate
- doped polysilicon gate
- double-input gate
- DSTL gate
- emitter-coupled logic gate
- emitter-coupled gate
- equivalent gate
- erase gate
- exclusive NOR gate
- exclusive OR gate
- expandable gate
- fan-in gate
- fan-out gate
- fault-free gate
- faulty gate
- finger gate
- floating gate
- functional gate
- IIL gate
- I2L gate
- imaging gate
- inclusive OR gate
- inspectation gate
- intrinsic gate
- inverting gate
- isolated gate
- Josephson-junction logic gate
- Josephson logic gate
- Josephson tunneling logic gate
- logic gate
- majority gate
- meander gate
- MOS gate
- MOSFET gate
- multiple-level logic gate
- multiple-level gate
- NAND gate
- negation gate
- negative gate
- negative AND gate
- nitride gate
- NOR gate
- NOT gate
- n+ poly gate
- offset gate
- OR gate
- OR–NOT gate
- polycrystalline silicon gate
- polysilicon gate
- process control gate
- QA gate
- quantum interference Joseph-son gate
- recessed gate
- refractory-metal gate
- replicate/annihilate gate
- resistive gate
- Scholtky-barriergate
- Scholtkygate
- Scholtky TTL gate
- sea gates
- self-aligned gate
- self-registered gate
- single-input gate
- single -logic level gate
- single level gate
- single-poly gate
- stacked gate
- storage gate
- transfer gate
- transistor gate
- variable threshold logic gate
- variable threshold gate
- V-groove MOS gate
- p-gate -
7 oxide
1) оксид, оксид 2) діоксид кремнію, SiO2- Al aluminum oxide- Al oxide
- antimonous oxide
- antimony oxide
- arsenic oxide
- arsenous oxide
- beryllium oxide
- boric oxide
- boron oxide
- boron-implanted oxide
- buried oxide
- capping oxide
- channel oxide
- chemical vapor deposited oxide
- crossover oxide
- doped oxide
- electron-beam evaporated oxide
- emitter reach-through oxide
- evaporated oxide
- ferric oxide
- ferrous oxide
- field oxide
- gate oxide
- implanted oxide
- insulation oxide
- interfacial oxide
- iron oxide
- lead-strontium-copper oxide
- low-temperature oxide LTO
- low-temperature oxide
- magnesium oxide
- maskingoxide
- maskoxide
- MOS oxide
- multilevel oxide
- nitric oxide
- nitrided oxide
- nitrous oxide
- phosphorus doped oxide
- planar oxide
- poly oxide
- pyrolytic oxide
- rare-earth oxide
- recessed oxide
- refractory oxide
- screening oxide
- screen oxide
- semiconducting oxide
- semiconductor oxide
- semirecessed oxide
- shallow oxide
- silicon oxide
- stepped oxide
- stress-relief oxide
- thermally grown oxide
- thick oxide
- thin oxide
- tin oxide
- tunnel oxide
См. также в других словарях:
refractory MOS — MOP darinys su sunkialydžio metalo užtūra statusas T sritis radioelektronika atitikmenys: angl. refractory MOS; refractory metal gate MOS structure vok. MOS Struktur mit dem Gate aus schwerschmelzendem Metall, f; Refractory MOS Struktur, f rus.… … Radioelektronikos terminų žodynas
Refractory-MOS-Struktur — MOP darinys su sunkialydžio metalo užtūra statusas T sritis radioelektronika atitikmenys: angl. refractory MOS; refractory metal gate MOS structure vok. MOS Struktur mit dem Gate aus schwerschmelzendem Metall, f; Refractory MOS Struktur, f rus.… … Radioelektronikos terminų žodynas
refractory-metal gate MOS structure — MOP darinys su sunkialydžio metalo užtūra statusas T sritis radioelektronika atitikmenys: angl. refractory MOS; refractory metal gate MOS structure vok. MOS Struktur mit dem Gate aus schwerschmelzendem Metall, f; Refractory MOS Struktur, f rus.… … Radioelektronikos terminų žodynas
MOS-Struktur mit dem Gate aus schwerschmelzendem Metall — MOP darinys su sunkialydžio metalo užtūra statusas T sritis radioelektronika atitikmenys: angl. refractory MOS; refractory metal gate MOS structure vok. MOS Struktur mit dem Gate aus schwerschmelzendem Metall, f; Refractory MOS Struktur, f rus.… … Radioelektronikos terminų žodynas
structure MOS à grille à la base de métal réfractaire — MOP darinys su sunkialydžio metalo užtūra statusas T sritis radioelektronika atitikmenys: angl. refractory MOS; refractory metal gate MOS structure vok. MOS Struktur mit dem Gate aus schwerschmelzendem Metall, f; Refractory MOS Struktur, f rus.… … Radioelektronikos terminų žodynas
MOP darinys su sunkialydžio metalo užtūra — statusas T sritis radioelektronika atitikmenys: angl. refractory MOS; refractory metal gate MOS structure vok. MOS Struktur mit dem Gate aus schwerschmelzendem Metall, f; Refractory MOS Struktur, f rus. МОП структура с затвором из тугоплавкого… … Radioelektronikos terminų žodynas
МОП-структура с затвором из тугоплавкого металла — MOP darinys su sunkialydžio metalo užtūra statusas T sritis radioelektronika atitikmenys: angl. refractory MOS; refractory metal gate MOS structure vok. MOS Struktur mit dem Gate aus schwerschmelzendem Metall, f; Refractory MOS Struktur, f rus.… … Radioelektronikos terminų žodynas
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