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1 ohmic contact
n безпосередній контакт; гальванічний контакт -
2 ohmic contact region
область омічного контактуEnglish-Ukrainian dictionary of microelectronics > ohmic contact region
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3 nonrectifying [ohmic] contact
омічний [невипрямляючий] контактEnglish-Ukrainian dictionary of microelectronics > nonrectifying [ohmic] contact
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4 contact
1. ім.1) контакт2. дієсл. контактувати - base contact
- beam-lead contact
- bifurcated contact
- blocking contact
- bonded contact
- bump contact
- buried contact
- crimp contact
- edge-board contact
- excimer-laser mixed contact
- hard contact
- injection contact
- ion-implanted contact
- low-resistance contact
- metallization contact
- metal-semiconductor contact
- MIS contact
- nonohmic contact
- nonrectifying [ohmic] contact
- point contact
- polysilicon-to-diffusion contact
- protruding contact
- rectifying contact
- resistance contact
- Schottky-barriercontact
- Schottkycontact
- Schottky base contact
- soft contact
- soldered contact
- substrate contact
- vacuum contact
- welded contact -
5 region
область; зона; ділянка (див. т-ж area, zone) - active TEG GaInAs region
- alloyed region
- avalanche region
- barrier region
- border region
- boundary region
- breakdown region
- buried region
- channel region
- channel stopреr region
- channel stop region
- charge-transfer region
- collector region
- conduction region
- conductor region
- cutoff region
- deep-UV region
- degenerate region
- depletion mode region
- depletion region
- deuterons implanted region
- diffusion-isolated region
- drain region
- drift region
- D-well region
- encroaching region
- enhanced region
- epitaxial region
- exposed region
- extrinsic region
- field region
- floating region
- forbidden region
- gate region
- graded region
- heavily-doped region
- high-conductivity region
- high-impurity region
- high-resistivity region
- hydrogenated region
- impurity region
- inactive region
- infrared region
- injection region
- injector region
- inset region
- insulation region
- insulator region
- interface region
- intrinsic region
- ion-implanted region
- island region
- isolation region
- junction region
- low-impurity region
- low-resistivity region
- multiplication region
- n region
- narrow-gap region
- near-UV region
- n-tab region
- ohmic contact region
- p region
- peripheral region
- periphery region
- polysilicon-on-охide region
- proton-damaged region
- proton implanted region
- reach-through region
- recessed охide region
- recombination region
- self-aligned regions
- shallow region
- shield region
- silicon-sapphire interface region
- softening region
- source region
- spreading-resistance region
- stack regions
- stepped-doping region
- storage region
- strip-like region
- strip-shaped region
- Strongly n-type region
- subcollector region
- subthreshold region
- superlattice region
- tank region
- terminating region
- thermally grown охide region
- transfer region
- transit-time region
- ultraviolet region
- V-groove region
- weak inversion region
- well region
- wide-gap region -
6 junction
1) (р–n–)перехід 2) спай (термопари) 3) з’єднання; зчленовування - alloy junction
- back-to-back junctions
- backward biased junction
- barrier junction
- base-collector junction
- base-emitter junction
- blocking junction
- chip junction
- cold junction
- collector-basejunction
- collectorjunction
- degenerate junction
- depleted junction
- diffused junction
- diffusion junction
- diode junction
- doped junction
- drain-channel junction
- drain-substrate junction
- electrical junction
- emitter-base junction
- emitter junction
- epitaxial junction
- epitaxially grown junction
- Esaki junction
- floating junction
- forward-biased junction
- fused junction
- graded junction
- grown semiconductor junction
- grown junction
- heteroface junction
- heterogeneous junction
- heterogeneous junction
- high-low junction
- homogeneous junction
- hot junction
- hyperabrupt junction
- injector junction
- intrinsic-extrinsic junction
- ion-implanted junction
- isolation junction
- Josephson junction
- long-lifetime junction
- low-high junction
- low-lifetime junction
- metallurgical junction
- metal–semiconductor junction
- nonreclifying junction
- n–p junction
- ohmic junction
- photoresistive junction
- photovoltaic junction
- pin junction
- planar junction
- point-contact junction
- point-contact Josephson junction
- recessed junction
- recrystallized junction
- rectifying junction
- remelt junction
- reverse-biased junction
- Schottky barrier junction
- sealed junction
- semiconductor-barrier Josephson junction
- shallow junction
- soft junction
- source-channel junction
- source-substrate junction
- step junction
- superconducting junction
- temperature controlled junction
- thin-film Josephson junction
- tunneling junction
- tunnel junction
- unbiased junction
- vapor-phase grown junction
- vapor grown junction
- weak-link junctions
- Zener breakdown junction -
7 layer
1. ім. шар; плівка 2. дієсл. наносити шар - accumulation layer
- amorphized layer
- anti-oxidation layer
- barrier layer
- base layer
- blanket layer
- blocking layer
- boundary layer
- branch layer
- buffer layer
- buried layer
- cap layer
- composite layer
- conducting layer
- conductor layer
- contact layer
- continuous layer
- depletion layer
- deposited layer
- diffused [diffusion] layer
- diffusion-impervious layer
- diffusion-source layer
- doped layer
- driving layer
- epitaxial layer
- epi layer
- etch-resistant layer
- evaporated layer
- evaporation layer
- field oxide layer
- Gaussian-doped layer
- heteroepitaxial layer
- high-concentration layer
- high-mobility layer
- homoepitaxial layer
- host layer
- implantation layer
- implanted layer
- impurity layer
- inert layer
- injection layer
- injector layer
- inset oxide layer
- insulating layer
- insulation layer
- insulator layer
- interconnection layer
- interface layer
- interfacial layer
- interlayer dielectric film layer
- intrinsic layer
- inversion layer
- ion-implantation layer
- lacquer layer
- lightly doped layer
- liquid-phase epitaxial layer
- low-mobility layer
- masking layer
- metallizationlayer
- metallayer
- metallized layer
- molecular epitaxy layer
- monoatomic layer
- monomolecular layer
- multiple layer
- multiple wiring layers
- n layer
- native layer
- nucleating layer
- ohmic layer
- organic passivation layer
- oxide-inhibiting layer
- p layer
- passivating layer
- passivation layer
- photosensitive layer
- planarizing layer
- polysilicon layer
- protective layer
- pyrolytically deposited layer
- registered layers
- resistive layer
- sacrificial layer
- sandwiched layers
- sealing layer
- seal layer
- separation layer
- signal layer
- source layer
- space-charge layer
- stepped layers
- stopping layer
- substrate layer
- superconductive layer
- superimposed layers
- superlattice layer
- supported semiconductor layer
- thermal-охide layer
- transition layer
- vacuum-deposited layer
- vacuum-evaporated layer
- via layer
- wiring layer
- wiring channel layer
- δ-doping layer
См. также в других словарях:
Ohmic contact — An ohmic contact is a region on a semiconductor device that has been prepared so that the current voltage (I V) curve of the device is linear and symmetric. If the I V characteristic is non linear and asymmetric, the contact is not ohmic, but is… … Wikipedia
ohmic contact — ominis sąlytis statusas T sritis radioelektronika atitikmenys: angl. ohmic contact vok. ohmscher Kontakt, m rus. омический контакт, m pranc. contact ohmique, m … Radioelektronikos terminų žodynas
ohmic contact — ominis sąlytis statusas T sritis fizika atitikmenys: angl. ohmic contact vok. ohmscher Kontakt, m rus. омический контакт, m pranc. contact ohmique, m … Fizikos terminų žodynas
ohmic contact metallization — ominių kontaktų metalizavimas statusas T sritis radioelektronika atitikmenys: angl. ohmic contact metallization; ohmic metallization vok. Metallisierung von ohmschen Kontakten, f rus. металлизация омических контактов, f; омическая металлизация, f … Radioelektronikos terminų žodynas
non-ohmic contact — neominis sąlytis statusas T sritis fizika atitikmenys: angl. non ohmic contact vok. nichtohmscher Kontakt, m rus. неомический контакт, m pranc. contact non ohmique, m … Fizikos terminų žodynas
quasi-ohmic contact — kvaziominis sąlytis statusas T sritis fizika atitikmenys: angl. quasi ohmic contact vok. quasiohmscher Kontakt, m rus. квазиомический контакт, m pranc. contact quasi ohmique, m … Fizikos terminų žodynas
ohmic metallization — ominių kontaktų metalizavimas statusas T sritis radioelektronika atitikmenys: angl. ohmic contact metallization; ohmic metallization vok. Metallisierung von ohmschen Kontakten, f rus. металлизация омических контактов, f; омическая металлизация, f … Radioelektronikos terminų žodynas
contact ohmique — ominis sąlytis statusas T sritis radioelektronika atitikmenys: angl. ohmic contact vok. ohmscher Kontakt, m rus. омический контакт, m pranc. contact ohmique, m … Radioelektronikos terminų žodynas
contact non ohmique — neominis sąlytis statusas T sritis fizika atitikmenys: angl. non ohmic contact vok. nichtohmscher Kontakt, m rus. неомический контакт, m pranc. contact non ohmique, m … Fizikos terminų žodynas
contact ohmique — ominis sąlytis statusas T sritis fizika atitikmenys: angl. ohmic contact vok. ohmscher Kontakt, m rus. омический контакт, m pranc. contact ohmique, m … Fizikos terminų žodynas
contact quasi ohmique — kvaziominis sąlytis statusas T sritis fizika atitikmenys: angl. quasi ohmic contact vok. quasiohmscher Kontakt, m rus. квазиомический контакт, m pranc. contact quasi ohmique, m … Fizikos terminų žodynas