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1 n-doped source
витік (з електропровідністю) n-типуEnglish-Ukrainian dictionary of microelectronics > n-doped source
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2 p-doped source
витік (з електропровідністю) р-типуEnglish-Ukrainian dictionary of microelectronics > p-doped source
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3 source
1) джерело 2) витік, витокова область (польового транзистора) - collimated source
- current source
- deep-ultraviolet source
- diffusant source
- diffused source
- diffusion source
- discrete source
- dopant source
- electron-beam evaporation source
- exposure source
- fanout source
- high-pressure gas source
- hybrid beam source
- infinite source
- ion-implanted source
- laser X-ray source
- liquid-metal ion source
- magnetron plasma discharge source
- MBE-style element source
- n-doped source
- oxygen plasma discharge source
- p-doped source
- planar source
- PTAT current source
- proportional to absolute temperature current source
- reference voltage source
- reference source
- semiconductor source
- solid source
- sputteringsource
- sputtersource
- UV source
- voltage source
- X-ray source -
4 layer
1. ім. шар; плівка 2. дієсл. наносити шар - accumulation layer
- amorphized layer
- anti-oxidation layer
- barrier layer
- base layer
- blanket layer
- blocking layer
- boundary layer
- branch layer
- buffer layer
- buried layer
- cap layer
- composite layer
- conducting layer
- conductor layer
- contact layer
- continuous layer
- depletion layer
- deposited layer
- diffused [diffusion] layer
- diffusion-impervious layer
- diffusion-source layer
- doped layer
- driving layer
- epitaxial layer
- epi layer
- etch-resistant layer
- evaporated layer
- evaporation layer
- field oxide layer
- Gaussian-doped layer
- heteroepitaxial layer
- high-concentration layer
- high-mobility layer
- homoepitaxial layer
- host layer
- implantation layer
- implanted layer
- impurity layer
- inert layer
- injection layer
- injector layer
- inset oxide layer
- insulating layer
- insulation layer
- insulator layer
- interconnection layer
- interface layer
- interfacial layer
- interlayer dielectric film layer
- intrinsic layer
- inversion layer
- ion-implantation layer
- lacquer layer
- lightly doped layer
- liquid-phase epitaxial layer
- low-mobility layer
- masking layer
- metallizationlayer
- metallayer
- metallized layer
- molecular epitaxy layer
- monoatomic layer
- monomolecular layer
- multiple layer
- multiple wiring layers
- n layer
- native layer
- nucleating layer
- ohmic layer
- organic passivation layer
- oxide-inhibiting layer
- p layer
- passivating layer
- passivation layer
- photosensitive layer
- planarizing layer
- polysilicon layer
- protective layer
- pyrolytically deposited layer
- registered layers
- resistive layer
- sacrificial layer
- sandwiched layers
- sealing layer
- seal layer
- separation layer
- signal layer
- source layer
- space-charge layer
- stepped layers
- stopping layer
- substrate layer
- superconductive layer
- superimposed layers
- superlattice layer
- supported semiconductor layer
- thermal-охide layer
- transition layer
- vacuum-deposited layer
- vacuum-evaporated layer
- via layer
- wiring layer
- wiring channel layer
- δ-doping layer -
5 diffusion
1) дифузія 2) рідк. дифузійна область - diffusion from а planar source
- ampoule diffusion
- back diffusion
- base diffusion
- base-and-resistor diffusion
- blanket diffusion
- box diffusion
- B&R diffusion
- channel diffusion
- closed-tube diffusion
- collector reach-through diffusion
- contact diffusion
- cross diffusion
- doped-polysilicon diffusion
- double diffusion
- drain and source diffusion
- drive-in diffusion
- enhanced diffusion
- error-function diffusion
- floating diffusion
- gaseous diffusion
- gas-phase diffusion
- gas-source diffusion
- guarding diffusion
- in diffusion
- inlerfacial diffusion
- interstitial diffusion
- laser-assisted diffusion
- laser-enhanced diffusion
- lateral diffusion
- liquid-phase diffusion
- masked diffusion
- multiple diffusion
- n-type diffusion
- one-step diffusion
- open-tube diffusion
- out diffusion
- oxidation-enhanced diffusion
- oxide-masked diffusion
- pipe diffusion
- planar diffusion
- predeposition diffusion
- proton-enhanced diffusion
- p-type diffusion
- selective diffusion
- separation diffusion
- shallow diffusion
- sideways diffusion
- single diffusion
- solid-state diffusion
- solid diffusion
- substitutional diffusion
- substrate diffusion
- tail diffusion
- vapor-phasediffusion
- vapordiffusionEnglish-Ukrainian dictionary of microelectronics > diffusion
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6 junction
1) (р–n–)перехід 2) спай (термопари) 3) з’єднання; зчленовування - alloy junction
- back-to-back junctions
- backward biased junction
- barrier junction
- base-collector junction
- base-emitter junction
- blocking junction
- chip junction
- cold junction
- collector-basejunction
- collectorjunction
- degenerate junction
- depleted junction
- diffused junction
- diffusion junction
- diode junction
- doped junction
- drain-channel junction
- drain-substrate junction
- electrical junction
- emitter-base junction
- emitter junction
- epitaxial junction
- epitaxially grown junction
- Esaki junction
- floating junction
- forward-biased junction
- fused junction
- graded junction
- grown semiconductor junction
- grown junction
- heteroface junction
- heterogeneous junction
- heterogeneous junction
- high-low junction
- homogeneous junction
- hot junction
- hyperabrupt junction
- injector junction
- intrinsic-extrinsic junction
- ion-implanted junction
- isolation junction
- Josephson junction
- long-lifetime junction
- low-high junction
- low-lifetime junction
- metallurgical junction
- metal–semiconductor junction
- nonreclifying junction
- n–p junction
- ohmic junction
- photoresistive junction
- photovoltaic junction
- pin junction
- planar junction
- point-contact junction
- point-contact Josephson junction
- recessed junction
- recrystallized junction
- rectifying junction
- remelt junction
- reverse-biased junction
- Schottky barrier junction
- sealed junction
- semiconductor-barrier Josephson junction
- shallow junction
- soft junction
- source-channel junction
- source-substrate junction
- step junction
- superconducting junction
- temperature controlled junction
- thin-film Josephson junction
- tunneling junction
- tunnel junction
- unbiased junction
- vapor-phase grown junction
- vapor grown junction
- weak-link junctions
- Zener breakdown junction -
7 region
область; зона; ділянка (див. т-ж area, zone) - active TEG GaInAs region
- alloyed region
- avalanche region
- barrier region
- border region
- boundary region
- breakdown region
- buried region
- channel region
- channel stopреr region
- channel stop region
- charge-transfer region
- collector region
- conduction region
- conductor region
- cutoff region
- deep-UV region
- degenerate region
- depletion mode region
- depletion region
- deuterons implanted region
- diffusion-isolated region
- drain region
- drift region
- D-well region
- encroaching region
- enhanced region
- epitaxial region
- exposed region
- extrinsic region
- field region
- floating region
- forbidden region
- gate region
- graded region
- heavily-doped region
- high-conductivity region
- high-impurity region
- high-resistivity region
- hydrogenated region
- impurity region
- inactive region
- infrared region
- injection region
- injector region
- inset region
- insulation region
- insulator region
- interface region
- intrinsic region
- ion-implanted region
- island region
- isolation region
- junction region
- low-impurity region
- low-resistivity region
- multiplication region
- n region
- narrow-gap region
- near-UV region
- n-tab region
- ohmic contact region
- p region
- peripheral region
- periphery region
- polysilicon-on-охide region
- proton-damaged region
- proton implanted region
- reach-through region
- recessed охide region
- recombination region
- self-aligned regions
- shallow region
- shield region
- silicon-sapphire interface region
- softening region
- source region
- spreading-resistance region
- stack regions
- stepped-doping region
- storage region
- strip-like region
- strip-shaped region
- Strongly n-type region
- subcollector region
- subthreshold region
- superlattice region
- tank region
- terminating region
- thermally grown охide region
- transfer region
- transit-time region
- ultraviolet region
- V-groove region
- weak inversion region
- well region
- wide-gap region
См. также в других словарях:
n-doped source — elektroninio laidumo ištaka statusas T sritis radioelektronika atitikmenys: angl. n doped source vok. n dotierte Source, f rus. исток n типа, m pranc. source type n, f … Radioelektronikos terminų žodynas
p-doped source — skylinio laidumo ištaka statusas T sritis radioelektronika atitikmenys: angl. p doped source vok. p dotierte Source, f rus. исток p типа, m pranc. source type p, f … Radioelektronikos terminų žodynas
source type n — elektroninio laidumo ištaka statusas T sritis radioelektronika atitikmenys: angl. n doped source vok. n dotierte Source, f rus. исток n типа, m pranc. source type n, f … Radioelektronikos terminų žodynas
source type p — skylinio laidumo ištaka statusas T sritis radioelektronika atitikmenys: angl. p doped source vok. p dotierte Source, f rus. исток p типа, m pranc. source type p, f … Radioelektronikos terminų žodynas
n-dotierte Source — elektroninio laidumo ištaka statusas T sritis radioelektronika atitikmenys: angl. n doped source vok. n dotierte Source, f rus. исток n типа, m pranc. source type n, f … Radioelektronikos terminų žodynas
p-dotierte Source — skylinio laidumo ištaka statusas T sritis radioelektronika atitikmenys: angl. p doped source vok. p dotierte Source, f rus. исток p типа, m pranc. source type p, f … Radioelektronikos terminų žodynas
Power MOSFET — A Power MOSFET is a specific type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed to handle large power. Compared to the other power semiconductor devices (IGBT, Thyristor...), its main advantages are high commutation speed … Wikipedia
elektroninio laidumo ištaka — statusas T sritis radioelektronika atitikmenys: angl. n doped source vok. n dotierte Source, f rus. исток n типа, m pranc. source type n, f … Radioelektronikos terminų žodynas
исток n-типа — elektroninio laidumo ištaka statusas T sritis radioelektronika atitikmenys: angl. n doped source vok. n dotierte Source, f rus. исток n типа, m pranc. source type n, f … Radioelektronikos terminų žodynas
skylinio laidumo ištaka — statusas T sritis radioelektronika atitikmenys: angl. p doped source vok. p dotierte Source, f rus. исток p типа, m pranc. source type p, f … Radioelektronikos terminų žodynas
исток p-типа — skylinio laidumo ištaka statusas T sritis radioelektronika atitikmenys: angl. p doped source vok. p dotierte Source, f rus. исток p типа, m pranc. source type p, f … Radioelektronikos terminų žodynas