-
1 FET
польовий транзистор, ПТ - bipolar inversion channel FET
- Bloch FET
- buried-channel FET
- charge-coupled FET
- closed-geometry FET
- compound FET
- conductor-insulator-semiconductor FET
- depletion-mode FET
- depletion FET
- dual-gate FET
- enhancement-modeFET
- enhancementFET
- floating-gate FET
- heterointerface FET
- heterostructure insulated-gate FET
- high-реrformance FET
- infrared FET
- insulated-gate FET
- ion-implanted FET
- ion-sensitive FET
- junction-gateFET
- junctionFET
- K-band FET
- lateral FET
- MBE FET
- metal-gate FET
- metal-insulator-semiconductor FET
- metal-охide-semiconductor
- metal-Schottky FET
- metal-semiconductor FET
- microwave FET
- modulation-doped FET
- multichannel FET
- multiple-gate finger FET
- nanometer-scale FET
- n-channel FET
- negative FET
- negative resistance FET
- normally-off FET
- normally-on FET
- offset-gate FET
- p-channel FET
- photosensitive FET
- photo FET
- p–n-junction FET
- positive-type FET
- resonant tunneling FET
- Schottky-diode FET
- Schottky-gate FET
- self-aligned gate FET
- self-aligned FET
- short-channel FET
- short gate-length FET
- silicon-gate FET
- tunneling-transfer FET
- two-dimensional electron-gas FET
- unipolar FET
- vertical-channel [vertical-structure] FET
- V-gate FET
- δ-doped FET
- δ FET
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