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1 low-layer function
функція нижнього шару (напр. металізації)English-Ukrainian dictionary of microelectronics > low-layer function
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2 layer
1. ім. шар; плівка 2. дієсл. наносити шар - accumulation layer
- amorphized layer
- anti-oxidation layer
- barrier layer
- base layer
- blanket layer
- blocking layer
- boundary layer
- branch layer
- buffer layer
- buried layer
- cap layer
- composite layer
- conducting layer
- conductor layer
- contact layer
- continuous layer
- depletion layer
- deposited layer
- diffused [diffusion] layer
- diffusion-impervious layer
- diffusion-source layer
- doped layer
- driving layer
- epitaxial layer
- epi layer
- etch-resistant layer
- evaporated layer
- evaporation layer
- field oxide layer
- Gaussian-doped layer
- heteroepitaxial layer
- high-concentration layer
- high-mobility layer
- homoepitaxial layer
- host layer
- implantation layer
- implanted layer
- impurity layer
- inert layer
- injection layer
- injector layer
- inset oxide layer
- insulating layer
- insulation layer
- insulator layer
- interconnection layer
- interface layer
- interfacial layer
- interlayer dielectric film layer
- intrinsic layer
- inversion layer
- ion-implantation layer
- lacquer layer
- lightly doped layer
- liquid-phase epitaxial layer
- low-mobility layer
- masking layer
- metallizationlayer
- metallayer
- metallized layer
- molecular epitaxy layer
- monoatomic layer
- monomolecular layer
- multiple layer
- multiple wiring layers
- n layer
- native layer
- nucleating layer
- ohmic layer
- organic passivation layer
- oxide-inhibiting layer
- p layer
- passivating layer
- passivation layer
- photosensitive layer
- planarizing layer
- polysilicon layer
- protective layer
- pyrolytically deposited layer
- registered layers
- resistive layer
- sacrificial layer
- sandwiched layers
- sealing layer
- seal layer
- separation layer
- signal layer
- source layer
- space-charge layer
- stepped layers
- stopping layer
- substrate layer
- superconductive layer
- superimposed layers
- superlattice layer
- supported semiconductor layer
- thermal-охide layer
- transition layer
- vacuum-deposited layer
- vacuum-evaporated layer
- via layer
- wiring layer
- wiring channel layer
- δ-doping layer -
3 low-mobility layer
шар з низькою рухливістю носіївEnglish-Ukrainian dictionary of microelectronics > low-mobility layer
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4 function
1. ім.1) функція2) дія, функціонування3) pl функціональні блоки2. дієсл. діяти, функціонувати - basic function
- complementer function
- composite function
- control function
- cost function
- decision function
- driving function
- EITHER-OR function
- exclusive OR function
- Fermi function
- Gaussian function
- hash function
- identity function
- inclusive OR function
- interface function
- library function
- logic function
- low-layer function
- majority function
- modulation transfer function
- NAND function
- NOR function
- NOT function
- OR function
- shape function
- single-level logic function
- storage function
- switching function
- transfer function
- trial function
- wave function
- work function -
5 growth
1) вирощування; нарощування 2) ріст (кристала) - crystal growth
- dendritic growth
- epitaxial growth
- heteroepitaxial growth
- film growth
- hillock growth
- laser-assisted pyrolytic growth
- layer-by-layer growth
- liquid-phase epitaxial growth
- liquid epitaxial growth
- low-pressure epitaxial growth
- low-temperature growth
- metal-organic growth
- metal-oxide-semiconductor growth
- molecular-beam epitaxial growth
- molecular-beam growth
- monolayer growth
- multistage growth
- oriented growth
- pre-epitaxial growth
- pulling growth
- selective growth
- shuttered growth
- single-crystal growth
- spurious growth
- «stop-and-go» MBE growth
- supported ribbon growth
- thermal oxide growth
- two-dimensional growth
- vapor-phase epitaxial growth
- vapor epitaxial growth -
6 process
1. ім.1) процес; (технологічний) метод, спосіб2) технологія (див. т-ж technique, technology)3) (технологічна) обробка; технологічна операція2. дієсл. обробляти; проводити технологічну операцію - all-ion-implant process
- all-planar process
- Auger process
- batch process
- BH bias and hardness process
- BH process
- bonding process
- BOX process
- bulk CMOS process
- bumping process
- chip-on-board process
- closed CMOS process
- CMOS-on-sapphire process
- composite сеll logic process
- contact process
- conventional process
- deep охide isolation process
- DIFET process
- diffused eutectic aluminum process
- direct synthesis and crystal pull process
- double-diffused process
- double ion-implanted process
- double-layer polysilicon gate MOS process
- double-layer polysilicon gate process
- epitaxial deposition process
- epitaxial process
- epitaxial growth process
- flip-over process
- floating-gate silicon process
- front-end process
- gold-doped process
- guard-banded CMOS process
- heterogeneous process
- high-voltage process
- HMOS process
- imaging process
- implantation process
- in-house process
- interconnection process
- inverted meniscus process
- ion plating process
- isoplanar -S, -Z, -2 process
- isoplanar process
- junction-isolated process
- laser-recrystallized process
- lithographic process
- low-pressure process
- low VT process
- lost wafer process
- major process
- masking process
- master slice process
- mesa-isolation process
- metal-gate MOS process
- metal-gate process
- microbipolar LSI process
- micrometer-dimension process
- mid-film process
- Minimod process
- Mo-gate MOS process
- Mo-gate process
- nitride process
- nitrideless process
- NSA process
- oxide-film isolation process
- oxide isolated process
- oxygen refilling process
- patterning process
- phosphorous buried-emitter process
- photoablative process
- photolithography process
- photoresist process
- planar oxidation process
- Planox process
- plasma etch process
- Poly I process
- Poly II process
- Poly 5 process
- poly-oxide process
- Poly-Si process
- polysilicon-gate process
- poly-squared MOS process
- proprietary process
- PSA bipolar process
- PSA process
- refractory metal MOS process
- refractory metal process
- sacrificial охide process
- sapphire dielectric isolation process
- scaled Poly 5 process
- screen-and-fire process
- selective field-охidation process
- self-aligned gate process
- self-aligned process
- self-registered gate process
- self-registered process
- semi-additive process
- semiconductor-thermoplastic-dielectric process
- semicustom process
- shadow masking process
- silk-screen process
- single poly process
- SMOS process
- SOS/CMOS process
- stacked fuse bipolar process
- Stalicide process
- step-and-repeat process
- subtractive-fabrication process
- surface process
- Telemos process
- thermal process
- thermally асtivated surface process
- thermal-охidation process
- three-mask process
- triple-diffused process
- triply-poly process
- twin-tub process
- twin-well process
- V-groove MOS process
- V-groove process
- wet process
- 3-D process -
7 wing
n1) крило•- all-moving wing - anhedral wing - arrow-type wing - augmentor wing - back-swept wing - backswept wing - boundary layer controlled wing - braced wing - canard wing - cantilever wing - clean wing - cooling wing - crescent wing - critical wing - delta wing - dihedral wing - elliptical wing - fixed wing - flying wing - folding wing - forward-swept wing - gull wing - high wing - high-lift devices wing - infinite-span wing - inner wing - inverted-gull wing - low wing - low aspect wing - low-drag wing - lower wing - mid wing - monospar wing - movable wing - outboard wing - outer wing - pivoting wing - rectangular wing - rigid wing - rotary wing - shoulder wing - single bay wing - single-spar wing - slotted wing - stressed-skin wing - swept wing - sweptback wing - sweptforward wing - tapered wing - thin-film rectenna-equipped wing - torsion box wing - two-spar wing - upper wing - variable-area wing - variable-geometry wing - variable-incidence wing - variable-sweep wing - variable-swept wing -
8 doping
легування. Технологія модифікації матеріалу додаванням домішки. - atomic layer doping
- background doping
- control doping
- counter doping
- double doping
- droplet-migration doping
- erratic doping
- field охide doping
- heavy [high] doping
- implantation doping
- implant doping
- injection doping
- interstitial doping
- ion-implantationdoping
- ion-implantdoping
- ion-shower doping
- laser doping
- lifetime-killer doping
- localized doping
- low-concentration doping
- low doping
- modulation doping
- neutron-transmutationdoping
- neutrondoping
- photochemical doping
- plasma doping
- post-охidation doping
- preferential doping
- proximity doping
- sheet doping
- shower doping
- solute doping
- substitutional doping
- transmutation doping -
9 epitaxy
епітаксія - atom layer epitaxy
- chemical beam epitaxy
- chloride vapor phase epitaxy
- close space epitaxy
- EBE epitaxy
- electron-beam epitaxy
- flow-rate modulation epitaxy
- gas-source molecular-beam epitaxy
- hot wall epitaxy
- hydrothermal epitaxy
- isolated silicon epitaxy
- lateral epitaxy
- liquid-phase epitaxy
- liquid epitaxy
- liquid-phase shift epitaxy
- liquid shift epitaxy
- low-temperature epitaxy
- metalloorganic vapor-phase epitaxy
- migration-enhanced epitaxy
- molecular-beamepitaxy
- molecularepitaxy
- photoassisted molecular-beam epitaxy
- seeding epitaxy
- selective epitaxy
- self-masking epitaxy
- solid-phase epitaxy
- thin-film epitaxy
- vacuum epitaxy
- vapor levitation epitaxy
- vapor-phase epitaxy
- vapor-transport epitaxy -
10 jet
1. n4) жиклер; форсунка; інжектор4) розпилення2. v 3. aреактивний, повітряно-реактивний◊•- air jet- atomizing jet - blowaway jet - boundary-layer jet - business jet - cargo jet - chocked jet - coherent jet - commercial jet - exhaust jet - fire extinguishing jet - fluid jet - fuel jet - gas turbine jet - jumbo jet - low-level jet - oil jet - outflowing jet - passenger jet - plasma jet - power jet - private jet - prop jet - propeller jet - pulse jet - ram jet - reaction jet - stability-guidance jet - supersonic business jet - turbulent jet - wide-bodied jet
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