leakage channel

См. также в других словарях:

• channel leakage current — kanalo nuotėkio srovė statusas T sritis radioelektronika atitikmenys: angl. channel leakage current vok. Kanalleckstrom, m rus. ток утечки канала, m pranc. courant de fuite de canal, m …   Radioelektronikos terminų žodynas

• Multi-channel length — is a technique for reducing power leakage in both active and idle modes on CMOS technology. Other techniques to reduce leakage, like power gating and SRAM retention, are targeted at reducing leakage power when the device, or portions of it, are… …   Wikipedia

• Subthreshold Leakage — Bei subthreshold leakage (englisch, dt. ‚Unterschwellspannungsleckstrom‘) handelt es sich um einen so genannten Leckstrom in MOS Transistoren, welche in aktuellen integrierten Schaltungen wie Prozessoren oder Mikrocontrollern verwendet werden.… …   Deutsch Wikipedia

• Subthreshold leakage — Bei subthreshold leakage (dt. »Unterschwellspannungsleckstrom«) handelt es sich um einen so genannten Leckstrom in MOS Transistoren, welche in aktuellen integrierten Schaltungen wie Prozessoren oder Mikrocontrollern verwendet werden.… …   Deutsch Wikipedia

• SOFAR channel — The SOFAR channel (short for Sound Frequency and Ranging channel), or deep sound channel (DSC),[1] is a horizontal layer of water in the ocean at which depth the speed of sound is minimal. The SOFAR channel acts as a waveguide for sound, and low… …   Wikipedia

• Side-channel attack — In cryptography, a side channel attack is any attack based on information gained from the physical implementation of a cryptosystem, rather than brute force or theoretical weaknesses in the algorithms (compare cryptanalysis). For example, timing… …   Wikipedia

• Non-verbal leakage — is a term used within Communication to describe the signs emitted by an individual when communicating in a certain channel. These signs given off are known as leakage and are either not intended or not known by the sender of the message.… …   Wikipedia

• Adjacent Channel Power — ACP Messung eines UMTS FDD Trägers Das Bild stellt neben den UMTS Träger Signals auch die Grenzfrequenzen der zwei unteren und oberen Nachbarkanäle dar (siehe Beispiel ACP Messung). Als Adjacent Channel Power (ACP), auch Nachbarkanalleistung,… …   Deutsch Wikipedia

• MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up …   Wikipedia

• Membrane potential — Differences in concentration of ions on opposite sides of a cellular membrane lead to a voltage called the membrane potential. Many ions have a concentration gradient across the membrane, including potassium (K+), which is at a high inside and a… …   Wikipedia

• semiconductor device — ▪ electronics Introduction       electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… …   Universalium