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21 annealing
- blue annealing
- bright annealing
- cap annealing
- capless annealing
- continuous wave laser annealing
- dead annealing
- dead-full annealing
- differential annealing
- diffusion annealing
- first annealing
- full annealing
- hydrogen annealing
- inverse annealing
- ion implantation damage annealing
- isothermal annealing
- laser annealing
- laser pulse annealing
- light annealing
- low energy laser annealing
- melt regime laser annealing
- moving laser beam annealing
- multiple pulse laser annealing
- multiple shot annealing
- multiscan electron beam annealing
- open annealing
- post laser annealing
- pre-laser thermal annealing
- process annealing
- pulsed electron beam annealing
- pulsed laser annealing
- recrystallization annealing
- scanning continuous-wave laser annealing
- solid phase annealing
- solid phase laser annealing
- solid regime laser annealing
- subcritical annealing
- two-pulse laser annealing
- two-wavelength laser annealing
- white annealing
- wire annealingEnglish-Russian dictionary of mechanical engineering and automation > annealing
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Ion implantation — is a materials engineering process by which ions of a material can be implanted into another solid, thereby changing the physical properties of the solid. Ion implantation is used in semiconductor device fabrication and in metal finishing, as… … Wikipedia
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Ion Beam Mixing — is a process for adhering two multilayers, especially a substrate and deposited surface layer. The process involves bombarding layered samples with doses of ion radiation in order to promote mixing at the interface, and generally serves as a… … Wikipedia
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double implantation ionique — dvikartinis jonų implantavimas statusas T sritis radioelektronika atitikmenys: angl. double ion implanted process vok. Doppelimplantation, f rus. двухкратная ионная имплантация, f pranc. double implantation ionique, f … Radioelektronikos terminų žodynas
Deep reactive-ion etching — (DRIE) is a highly anisotropic etch process used to create deep penetration, steep sided holes and trenches in wafers, with aspect ratios of 20:1 or more. It was developed for microelectromechanical systems (MEMS), which require these features,… … Wikipedia