-
1 дефект, вызванный ионной имплантацией
1) Electronics: ion-implantation-induced defect2) Microelectronics: ion-beam damageУниверсальный русско-английский словарь > дефект, вызванный ионной имплантацией
-
2 отжиг радиационных дефектов
1) Engineering: radiation damage annealing, radiation-damage annealing2) Automation: ion implantation damage annealing (отжиг дефектов, обусловленных ионной имплантацией)3) Makarov: radiation defect annealingУниверсальный русско-английский словарь > отжиг радиационных дефектов
См. также в других словарях:
Ion channel — Not to be confused with: Ion Television or Ion implantation. Schematic diagram of an ion channel. 1 channel domains (typically four per channel), 2 outer vestibule, 3 selectivity filter, 4 diameter of selectivity filter, 5 phosphorylation site, 6 … Wikipedia
radiation — radiational, adj. /ray dee ay sheuhn/, n. 1. Physics. a. the process in which energy is emitted as particles or waves. b. the complete process in which energy is emitted by one body, transmitted through an intervening medium or space, and… … Universalium
Collision cascade — A classical molecular dynamics computer simulation of a collision cascade in Au induced by a 10 keV Au self recoil. This is a typical case of a collision cascade in the heat spike regime. Each small sphere illustrates the position of an atom, in… … Wikipedia
Threshold displacement energy — The threshold displacement energy Td is the minimum kinetic energy that an atom in a solid needs to be permanently displaced from its lattice site to a defect position. It is also known as displacement threshold energy or just displacement energy … Wikipedia
Nitrogen-vacancy center — The nitrogen vacancy center (N V center) is one of numerous point defects in diamond. Its most explored and useful property is photoluminescence, which can be easily detected from an individual N V center. Electron spins at N V centers, localized … Wikipedia
Crystallographic defects in diamond — Synthetic diamonds of various colors grown by the high pressure high temperature technique, the diamond size is 2 mm … Wikipedia
Wafer (electronics) — Polished 12 and 6 silicon wafers. The flat cut into the right wafer indicates its doping and crystallographic orientation (see below) … Wikipedia
Radioactive waste — 2007 ISO radioactivity danger logo, designed in part for long term radioactive waste depositories which might survive into a far future time in which all knowledge of the meaning of present common radiation danger symbols and signs has been lost… … Wikipedia
Diffraction topography — (short: topography ) is an X ray imaging technique based on Bragg diffraction. Diffraction topographic images ( topographs ) record the intensity profile of a beam of X rays (or, sometimes, neutrons) diffracted by a crystal. A topograph thus… … Wikipedia
Semiconductor device fabrication — Semiconductor manufacturing processes 10 µm 1971 3 µm 1975 1.5 µm 1982 … Wikipedia
Dopant Activation — is the process of obtaining the desired electronic contribution from impurity species in a semiconductor host.[1] The term is often restricted to the application of thermal energy following the ion implantation of dopants. In the most common… … Wikipedia