ion-beam lithography

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• Ion beam lithography — By analogy to E beam lithography, focused ion beam lithography scans an ion beam across a surface to form a pattern. The ion beam may be used for directly sputtering the surface, or may induce chemical reactions in the exposed top layer (resist) …   Wikipedia

• ion-beam lithography — jonpluoštė litografija statusas T sritis radioelektronika atitikmenys: angl. ion beam lithography; ion beam printing vok. Ionenstrahllithografie, f rus. ионная литография, f; ионно пучковая литография, f pranc. lithographie par faisceau ionique,… …   Radioelektronikos terminų žodynas

• focused ion-beam lithography — fokusuojamoji jonpluoštė litografija statusas T sritis radioelektronika atitikmenys: angl. focused ion beam lithography vok. Lithografie mittels fokussierter Ionenstrahlen, f rus. литография с фокусируемым ионным пучком, f pranc. lithographie par …   Radioelektronikos terminų žodynas

• ion-beam printing — jonpluoštė litografija statusas T sritis radioelektronika atitikmenys: angl. ion beam lithography; ion beam printing vok. Ionenstrahllithografie, f rus. ионная литография, f; ионно пучковая литография, f pranc. lithographie par faisceau ionique,… …   Radioelektronikos terminų žodynas

• Electron beam lithography — (often abbreviated as e beam lithography) is the practice of scanning a beam of electrons in a patterned fashion across a surface covered with a film (called the resist),cite book |last= McCord |first=M. A. |coauthors=M. J. Rooks |title=… …   Wikipedia

• Next-generation lithography — (NGL) is a term used in integrated circuit manufacturing to describe the lithography technologies slated to replace photolithography. As of 2009 the most advanced form of photolithography is immersion lithography, in which water is used as an… …   Wikipedia

• Electron Beam Ion Source — Eine Electron Beam Ion Trap (EBIT, Elektronenstrahl Ionenfalle) ist eine spezielle Art von Ionenfalle. Dieser Typ Falle eignet sich insbesondere für die Erzeugung und Speicherung hochgeladener Ionen. In ihr werden niedriggeladene Ionen… …   Deutsch Wikipedia

• Electron Beam Ion Trap — Eine Electron Beam Ion Trap (EBIT) bzw. Elektronenstrahl Ionenfalle ist eine spezielle Art von Ionenfalle. Dieser Typ Falle eignet sich insbesondere für die Erzeugung und Speicherung hochgeladener Ionen. In ihr werden niedriggeladene Ionen… …   Deutsch Wikipedia

• Electron beam ion trap — (or its acronym EBIT) is used in physics to denote an electromagnetic bottle that produces and confines highly charged ions. It was invented by R. Marrs [Levine et al, 1988] and M. Levine at LLNL.An EBIT uses an electron beam focused by means of… …   Wikipedia

• Maskless lithography — In maskless lithography, the radiation that is used to expose a photosensitive emulsion (or photoresist) is not projected from, or transmitted through, a photomask.[1] Instead, most commonly, the radiation is focused to a narrow beam. The beam is …   Wikipedia

• Nanoimprint lithography — is a method of fabricating nanometer scale patterns. It is a simple nanolithography process with low cost, high throughput and high resolution. It creates patterns by mechanical deformation of imprint resist and subsequent processes. The imprint… …   Wikipedia