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21 HEMT
-, (=high electron mobility transistor) -
22 HEMT
high-electron-mobility transistor - транзистор с высокой подвижностью электронов; ВПЭ-транзистор -
23 HEMT
= high electron mobility transistor -
24 HEMT
1) Оптика: high-electron-mobility transistor2) Сокращение: High Electron Mobility Transistor -
25 technolog/y
1) технологія (див. т-ж арproach, technique) 2) техніки - advanced technolog/y
- alignment technolog/y
- analog technolog/y
- baseline technolog/y
- basic technolog/y
- batch technolog/y
- beam-tape technolog/y
- bi-FET technolog/y
- bi-MOS technolog/y
- BIMOS technolog/y
- bipolar technolog/y
- bit-slice technolog/y
- beardless technolog/y
- BSA technolog/y
- bubble technolog/y
- bumping technolog/y
- CAD technolog/yies
- CCD technolog/y
- cell array technolog/y
- cermet technolog/y
- CMOS technolog/y
- coating technolog/y
- cryogenic technolog/y
- current technolog/y
- custom-design technolog/y
- deep-ultraviolet photolithographic technolog/y
- dense LSI technolog/y
- diffused epitaxial planar technolog/y
- diffusion technolog/y
- digital technolog/y
- dominant technolog/y
- dry technolog/y
- dry chemical etching technolog/y
- ECL technolog/y
- electron technolog/y
- electron-beam exposure technolog/y
- electron-parts technolog/y
- electro-optical technolog/y
- epibase technolog/y
- epiplanar technolog/y
- epitaxial planar technolog/y
- film-carrier technolog/y
- fine-line technolog/y
- flip-chip bonding technolog/y
- flip-chip technolog/y
- full-slice technolog/y
- fuse-link technolog/y
- fusible-link technolog/y
- gallium arsenide technolog/y
- gate-array technolog/y
- high technolog/y
- high-density technolog/y
- high-electron mobility transistor technolog/y
- “high-end” technolog/y
- high-speed technolog/y
- hybrid technolog/y
- industry-standard MOS technolog/y
- information technolog/y
- inner-lead bonding technolog/y
- integration technolog/y
- interconnection technolog/y
- isoplanar technolog/y
- J-FET technolog/y
- Josephson-junctiontechnolog/y
- Josephsontechnolog/y
- leading-edge technolog/y
- lithographic technolog/y
- logic technolog/y
- low technolog/y
- “low-end” technolog/y
- low-power technolog/y
- magnetic-bubble technolog/y
- mainstream technolog/y
- mask-fabrication technolog/y
- master-slice technolog/y
- merged bipolar technolog/y
- merged technolog/y
- metal-board technolog/y
- metallization technolog/y
- microcircuit technolog/y
- microelectronic technolog/y
- microsystems technolog/y MST
- microsystems technolog/y
- MIS technolog/y
- mixed technolog/y
- monolithic technolog/y
- MOS technolog/y
- MTL technolog/y
- multilayer-wiring technolog/y
- multiple-epitaxial planar technolog/y
- n-channel technolog/y
- optical lithographic technolog/y
- oxide-isolated monolithic technolog/y
- passivation technolog/y
- p-channel technolog/y
- p-channel Si-gate technolog/y
- photofabrication technolog/y
- planar fabrication technolog/y
- planar technolog/y
- plasma technolog/y
- plating technolog/y
- polysilicon-gate technolog/y
- polysilicon-load technolog/y
- polysilicon self-aligned PSA technolog/y
- polysilicon self-aligned technolog/y
- resistless etching technolog/y
- robotic technolog/y
- scaled process technolog/y
- scaled technolog/y
- Schottky transistor logic technolog/y
- Schottky TTL technolog/y
- screen-and-fire technolog/y
- self-aligned source-drain diffusion technolog/y
- shared silicon technolog/y
- silicide-gate technolog/y
- silicon technolog/y
- silicon-gate technolog/y
- silicon-in-insulator technolog/y
- silicon-in-sapphire technolog/y
- silicon-on-insulator technolog/y
- silicon-on-sapphire technolog/y
- silicon wafer technolog/y
- single-diffused planar technolog/y
- single-diffused technolog/y
- solid-state technolog/y
- spider-bonding technolog/y
- standard bipolar technolog/y
- submicron IC technolog/y
- submicron technolog/y
- subnanosecond technolog/y
- substrate technolog/y
- subtractive technolog/y
- superconducting technolog/y
- surface-mount technolog/y
- system technolog/y
- TAB technolog/y
- tape-automated-bonding technolog/y
- tape bumping technolog/y
- thick-film multilayer technolog/y
- thick-film hybrid technolog/y
- thin-film technolog/y
- trench technolog/y
- trench isolation technolog/y
- TTL technolog/y
- ULA technolog/y
- ultraviolet photolithography technolog/y
- unipolar technolog/y
- V-groove technolog/y
- VHSIC technolog/y
- wafer bumping technolog/y
- water treatment technolog/y
- wiring technolog/y
- X-ray technolog/yEnglish-Ukrainian dictionary of microelectronics > technolog/y
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26 MHEMT
1) Полупроводники: metamorphic high-electron mobility transistor2) Высокочастотная электроника: metamorphic high electron mobility transistor -
27 PHEMT
1) Электроника: Pseudomorphic High Electron Mobility Transistor2) Полупроводники: pseudomorphic HEMT3) Высокочастотная электроника: psuedomorphic high electron mobility transistor -
28 HEMT
сокр. [high-electron-mobility transistor] транзистор с высокой подвижностью электронов, ВПЭ-транзистор -
29 HEMT
сокр. от
high-electron-mobility transistorтранзистор с высокой подвижностью электронов, ВПЭ-транзистор -
30 HEMT
сокр. от high electron mobility transistorThe New English-Russian Dictionary of Radio-electronics > HEMT
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31 HEMT
транзистор с высокой подвижностью электронов
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[ http://www.iks-media.ru/glossary/index.html?glossid=2400324]Тематики
- электросвязь, основные понятия
EN
Англо-русский словарь нормативно-технической терминологии > HEMT
- 1
- 2
См. также в других словарях:
High Electron Mobility Transistor — HEMT stands for High Electron Mobility Transistor, and is also called heterostructure FET (HFET) or modulation doped FET (MODFET). A HEMT is a field effect transistor incorporating a junction between two materials with different band gaps (i.e. a … Wikipedia
High-electron-mobility transistor — Querschnitt eines InGaAs pseudomorphen HEMT Der high electron mobility transistor (HEMT, dt. »Transistor mit hoher Elektronenbeweglichkeit«) ist eine spezielle Bauform des Feldeffekttransistors für sehr hohe Frequenzen und ist von der… … Deutsch Wikipedia
high-electron mobility transistor — didelio elektronų judrio tranzistorius statusas T sritis radioelektronika atitikmenys: angl. high electron mobility transistor vok. Transistor mit hoher Elektronenbeweglichkeit, m rus. транзистор с высокой подвижностью электронов, m pranc.… … Radioelektronikos terminų žodynas
High Electron Mobility Transistor — Der High Electron Mobility Transistor (HEMT, dt. »Transistor mit hoher Elektronenbeweglichkeit«) ist eine spezielle Bauform des Feldeffekttransistors für sehr hohe Frequenzen und ist von der Konstruktion her eine spezielle Bauform eines JFETs.… … Deutsch Wikipedia
Induced high electron mobility transistor — In contrast to a modulation doped HEMT, an induced high electron mobility transistor provides the flexibility to tune different electron densities with a top gate. Since the charge carriers are induced to the 2DEG plane rather than created by… … Wikipedia
Electron mobility — This article is about the mobility for electrons and holes in metals and semiconductors. For the general concept, see Electrical mobility. In solid state physics, the electron mobility characterizes how quickly an electron can move through a… … Wikipedia
Transistor — For other uses, see Transistor (disambiguation). Assorted discrete transistors. Packages in order from top to bottom: TO 3, TO 126, TO 92, SOT 23 A transistor is a semiconductor device used to amplify and switch electronic signals and power. It… … Wikipedia
Transistor à effet de champ — Circuit électronique avec transistor à effet de champ Un transistor à effet de champ (FET pour Field Effect Transistor) est un dispositif semiconducteur de la famille des transistors. Sa particularité est d utiliser un champ électrique pour… … Wikipédia en Français
Transistor de efecto campo — P channel N channel Símbolos esquemáticos para los JFETs canal n y canal p. G=Puerta(Gate), D=Drenador(Drain) y S=Fuente(Source). El transistor de efecto campo (Field Effect Transistor o FET, en inglés) es en realidad una familia de transistores… … Wikipedia Español
Transistor mit hoher Elektronenbeweglichkeit — didelio elektronų judrio tranzistorius statusas T sritis radioelektronika atitikmenys: angl. high electron mobility transistor vok. Transistor mit hoher Elektronenbeweglichkeit, m rus. транзистор с высокой подвижностью электронов, m pranc.… … Radioelektronikos terminų žodynas
transistor à haute mobilité d'électrons — didelio elektronų judrio tranzistorius statusas T sritis radioelektronika atitikmenys: angl. high electron mobility transistor vok. Transistor mit hoher Elektronenbeweglichkeit, m rus. транзистор с высокой подвижностью электронов, m pranc.… … Radioelektronikos terminų žodynas