-
61 germanium
1) германиевый
2) германий
– doped germanium
– germanium diode
– germanium dioxide
– germanium photocell
– germanium rectifier
– germanium transistor
– polycrystalline germanium
– single-crystal germanium
-
62 region
область; зона; ділянка (див. т-ж area, zone) - active TEG GaInAs region
- alloyed region
- avalanche region
- barrier region
- border region
- boundary region
- breakdown region
- buried region
- channel region
- channel stopреr region
- channel stop region
- charge-transfer region
- collector region
- conduction region
- conductor region
- cutoff region
- deep-UV region
- degenerate region
- depletion mode region
- depletion region
- deuterons implanted region
- diffusion-isolated region
- drain region
- drift region
- D-well region
- encroaching region
- enhanced region
- epitaxial region
- exposed region
- extrinsic region
- field region
- floating region
- forbidden region
- gate region
- graded region
- heavily-doped region
- high-conductivity region
- high-impurity region
- high-resistivity region
- hydrogenated region
- impurity region
- inactive region
- infrared region
- injection region
- injector region
- inset region
- insulation region
- insulator region
- interface region
- intrinsic region
- ion-implanted region
- island region
- isolation region
- junction region
- low-impurity region
- low-resistivity region
- multiplication region
- n region
- narrow-gap region
- near-UV region
- n-tab region
- ohmic contact region
- p region
- peripheral region
- periphery region
- polysilicon-on-охide region
- proton-damaged region
- proton implanted region
- reach-through region
- recessed охide region
- recombination region
- self-aligned regions
- shallow region
- shield region
- silicon-sapphire interface region
- softening region
- source region
- spreading-resistance region
- stack regions
- stepped-doping region
- storage region
- strip-like region
- strip-shaped region
- Strongly n-type region
- subcollector region
- subthreshold region
- superlattice region
- tank region
- terminating region
- thermally grown охide region
- transfer region
- transit-time region
- ultraviolet region
- V-groove region
- weak inversion region
- well region
- wide-gap region -
63 silox
діоксид кремнію, SiO2 -
64 conduit
1) кабелепровод: кабельный канал3) микр. перемычка•- ground conduit
- heavily-doped silicon conduit
- interconnection conduit
- rigid conduit -
65 conduit
1) кабелепровод: кабельный канал3) микр. перемычка•- ground conduit
- heavily-doped silicon conduit
- interconnection conduit
- rigid conduitThe New English-Russian Dictionary of Radio-electronics > conduit
-
66 germanium
германий || германиевый
См. также в других словарях:
heavily-doped material — stipriai legiruota medžiaga statusas T sritis radioelektronika atitikmenys: angl. heavily doped material vok. hochdotiertes Material, n rus. сильнолегированный материал, m pranc. matériau fortement dopé, m … Radioelektronikos terminų žodynas
heavily-doped region — stipriai legiruota sritis statusas T sritis radioelektronika atitikmenys: angl. heavily doped region vok. hochdotierter Bereich, m rus. сильнолегированная область, f pranc. région fortement dopée, f … Radioelektronikos terminų žodynas
be doped up — informal be heavily under the influence of drugs. → dope … English new terms dictionary
Electron mobility — This article is about the mobility for electrons and holes in metals and semiconductors. For the general concept, see Electrical mobility. In solid state physics, the electron mobility characterizes how quickly an electron can move through a… … Wikipedia
Bipolar junction transistor — BJT redirects here. For the Japanese language proficiency test, see Business Japanese Proficiency Test. PNP … Wikipedia
Diode — Figure 1: Closeup of a diode, showing the square shaped semiconductor crystal (black object on left) … Wikipedia
semiconductor device — ▪ electronics Introduction electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… … Universalium
Doping (semiconductor) — In semiconductor production, doping intentionally introduces impurities into an extremely pure (also referred to as intrinsic) semiconductor for the purpose of modulating its electrical properties. The impurities are dependent upon the type of… … Wikipedia
MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia
Резонанс Фано — тип резонанса с асимметричным профилем, возникающего в результате интерференции двух волновых процессов. Природа интерферирующих процессов может быть самой различной, поэтому такой резонанс носит универсальный характер и появляется в различных… … Википедия
Charge-coupled device — A specially developed CCD used for ultraviolet imaging in a wire bonded package. A charge coupled device (CCD) is a device for the movement of electrical charge, usually from within the device to an area where the charge can be manipulated, for… … Wikipedia