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1 silicon
кремній, Si - bare silicon
- black silicon
- boron-implanted silicon
- bulk silicon
- capped silicon
- counterdoped silicon
- CVD silicon
- CZ silicon
- Czochralski silicon
- doped silicon
- electron-irradiated silicon
- epitaxial silicon
- floating-zone FZ silicon
- float-zone FZ silicon
- floating-zone silicon
- float-zone silicon
- germanium hardened silicon
- glow-discharge silicon
- high-resistivity silicon
- hydrogenated amorphous silicon
- implantation-amorphised silicon
- ion-implanted silicon
- microcrystalline silicon
- native silicon
- n+ diffused silicon
- neutron-doped silicon
- semiconductor-grade silicon
- silicided silicon
- single-crystal silicon
- zero-defect silicon
- 111 silicon -
2 float(ing)-zone (FZ) silicon
кремній, одержаний методом зонної плавкиEnglish-Ukrainian dictionary of microelectronics > float(ing)-zone (FZ) silicon
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3 float(ing)-zone (FZ) silicon
кремній, одержаний методом зонної плавкиEnglish-Ukrainian dictionary of microelectronics > float(ing)-zone (FZ) silicon
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4 float(ing)-zone (FZ) silicon
кремній, одержаний методом зонної плавкиEnglish-Ukrainian dictionary of microelectronics > float(ing)-zone (FZ) silicon
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5 float(ing)-zone (FZ) silicon
кремній, одержаний методом зонної плавкиEnglish-Ukrainian dictionary of microelectronics > float(ing)-zone (FZ) silicon
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6 method
метод (див. т-ж approach, technique) - method of short circuits time constants
- aligning method
- angle-lappingmethod
- angle-lapmethod
- batch method
- Bridgeman-Stockbarger method
- computerized reliability analysis method
- critical path method
- crucibleless method
- CZ Czochralski method
- CZ method
- directional etch method
- double-crucible method
- edge-based method
- epitaxial isolation method
- event-driven method
- Euler’s method
- fault driven method
- finite-difference method
- finite-element method
- flip-chip method
- floating -zone method
- float -zone method
- four-point probe method
- four probe method
- greedy method
- Green function method
- hand-drafted method
- horizontal Bridgeman method
- LEC liquid encapsulated Czochralski method
- LEC method
- low-pressure triode method
- manufacturing method
- masking method
- MCmethod
- method modified nodal analysis method
- Monte-Carlo method
- noncontact method
- over-under probe method
- photolithography method
- photomasking method
- scan direct access method
- scan-path method
- screening method
- self-aligning method
- silicon compiler method
- single-mask method
- standard-сеll method
- standing-wave method
- state variable method
- step-and-repeat multilens method
- step-and-repeat multiple-pinhole method
- symbolic layout method
- weak beam method
- wire method
- wire-wrap method
См. также в других словарях:
Float-zone silicon — is a high purity alternative to silicon grown by the Czochralski process. The concentrations of impurities, such as carbon and oxygen, are extremely low. Impurities such as nitrogen, which are thought to bring about an improvement in mechanical… … Wikipedia
float-zone silicon — noun a very pure form of crystalline silicon, made by the Czochralski process … Wiktionary
Zone melting — is a method of separation by melting in which a molten zone traverses a long ingot of impure metal or chemical. In its common use for purification, the molten region melts impure solid at its forward edge and leaves a wake of purer material… … Wikipedia
Crystalline silicon — is a material consisting of one or more small silicon crystals. Polycrystalline silicon Polycrystalline silicon (or polysilicon, poly Si, or simply poly in context) is a material consisting of multiple small silicon crystals.Polycrystalline… … Wikipedia
zone melting — a process of purifying any of various metals and other materials, as germanium or silicon, by passing it in bar form through an induction coil. Also called zone refining. Cf. cage zone melting. [1955 60] * * * Any of a group of techniques used to … Universalium
Silicon carbide — Chembox new Name = Silicon carbide ImageFile = Silicon carbide 3D balls.png ImageSize = 140px ImageName = Ball and stick model of part of a crystal of SiC ImageFile1 = silicon carbide detail.jpg ImageSize1 = 140px OtherNames = Section1 = Chembox… … Wikipedia
Polycrystalline silicon — Polycrystalline silicon, also called polysilicon, is a material consisting of small silicon crystals. It differs from single crystal silicon, used for electronics and solar cells, and from amorphous silicon, used for thin film devices and solar… … Wikipedia
Monocrystalline silicon — Unit cell of silicon; diamond cubic structure, lattice spacing 5.43071 Å … Wikipedia
Hayward Fault Zone — The Hayward Fault Zone is a geologic fault zone capable of generating significantly destructive earthquakes. About 60 kilometers long, it lies mainly along the western base of the hills on the east side of San Francisco Bay. It runs through… … Wikipedia
Czochralski process — The Czochralski process The Czochralski process is a method of crystal growth used to obtain single crystals of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, platinum, silver, gold), salts, and synthetic … Wikipedia
FZ — may refer to:* Frank Zappa, an American composer, musician, and film director * F Zero, a futuristic racing video game by Nintendo * Float zone silicon, a high purity alternative silicon grown * Fold Zandura, an American alternative rock band … Wikipedia