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1 doped silicon
легований кремнійEnglish-Ukrainian dictionary of microelectronics > doped silicon
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2 heavily-doped silicon conduit
перемичка з сильнолегованого кремнію, низькоомна кремнієва перемичкаEnglish-Ukrainian dictionary of microelectronics > heavily-doped silicon conduit
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3 neutron-doped silicon
нейтронно-легований кремнійEnglish-Ukrainian dictionary of microelectronics > neutron-doped silicon
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4 silicon
кремній, Si - bare silicon
- black silicon
- boron-implanted silicon
- bulk silicon
- capped silicon
- counterdoped silicon
- CVD silicon
- CZ silicon
- Czochralski silicon
- doped silicon
- electron-irradiated silicon
- epitaxial silicon
- floating-zone FZ silicon
- float-zone FZ silicon
- floating-zone silicon
- float-zone silicon
- germanium hardened silicon
- glow-discharge silicon
- high-resistivity silicon
- hydrogenated amorphous silicon
- implantation-amorphised silicon
- ion-implanted silicon
- microcrystalline silicon
- native silicon
- n+ diffused silicon
- neutron-doped silicon
- semiconductor-grade silicon
- silicided silicon
- single-crystal silicon
- zero-defect silicon
- 111 silicon -
5 conduit
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6 material
матеріал - acceptor material
- adulterated semiconductor material
- base material
- binding material
- brittle material
- bubble material
- carrier material
- cermet material
- coarse-featured resist material
- composite material
- compound semiconductor material
- conductivity-type imparting material
- contact material
- contrast enhancing material
- dopant masking material
- doped material
- doping material
- electronic material
- electron resist material
- encapsulating material
- encapsulation material
- epitaxial material
- etchant masking material
- etching material
- evaporated material
- evaporation material
- filler material
- film material
- fine-featured resist material
- foreign material
- fragile material
- group III-V compound semiconductor material
- heavily doped material
- high-resistivity material
- host material
- impurity material
- laminated material
- liquid-crystal material
- lowly doped material
- low-resistivity material
- LSCO material
- magnetostrictive material
- mask-forming material
- mask material
- mismatched materials
- molding material
- multilayer material
- negative-image material
- organosilicone material
- packaging material
- parent material
- patterned material
- photoresist material
- photoresponsive material
- photosensitive material
- piezoelectric material
- plastic material
- polycrystalline material
- positive-image material
- refractory material
- resist material
- resistive material
- semiconductive material
- semiconductor material
- semiconductor-glass composite material
- silicon-on-insulator material
- silicon-on-sapphire material
- Si-MBE material
- single-crystal material
- spinel material
- starting material
- stop-etch material
- substrate material
- superconducting material
- support material
- thallium-based material
- thixotropic material
- virgin material
- Y–Ba–Cu–O material
- Y1–Ba2–Cu3–O7-x material
- 1-2-3 material -
7 transistor
транзистор - abrupt heterojunction bipolar transistor
- access transistor
- amorphous transistor
- avalanche-injector MOS transistor
- ballistic transistor
- barrier-emitter transistor
- beam-lead transistor
- bipolar junction transistor
- bipolar transistor
- bipolar quantum resonant tunneling transistor
- buried-channel MOS transistor
- buried-channel transistor
- buried-oxide MOS transistor
- charge-injection transistor
- chip transistor
- chip-and-wire transistor
- clamped transistor
- closed-gate MOS transistor
- collector-grounded transistor
- common-base transistor
- common-collector transistor
- common-emitter transistor
- complementary transistors
- composite transistor
- Darlington transistor
- deep depletion transistor
- deep-diode transistor
- depletion-mode MOS transistor
- depletion MOS transistor
- diffused-emitter-and-base transistor
- diffused planar transistor
- δ-doped field-effect transistor
- double-diffused MOS transistor
- double-heterojunction bipolar transistor
- double-implanted MOS transistor
- downward-scaled MOS transistor
- electrostatic induction transistor
- emitter-coupled transistor
- enhancement-mode MOS transistor
- enhancement MOS transistor
- epibase transistor
- epitaxial planar transistor
- epitaxial transistor
- fan-out transistor
- fast switching transistor
- field-effect transistor
- filamentary transistor
- floating-gate MOS transistor
- front-end transistor
- gate-modulated bipolar transistor
- GIMIC transistor
- grooved-gate MOS transistor
- heterojunction transistor
- high-electron mobility transistor
- high-performance transistor
- H-MOS transistor
- homojunction transistor
- hot-electron transistor
- integrated circuit transistor
- integrated transistor
- interdigitated transistor
- inverted transistor
- ion-implanted base transistor
- ion sensitive field effect transistor ISFET
- ion sensitive field effect transistor
- junction transistor
- lateral transistor
- load transistor
- low-power transistor
- memory transistor
- merged transistor
- mesa-typetransistor
- mesatransistor
- mesh-emitter transistor
- metal-alumina-semiconductor transistor
- metal-base transistor
- metal-gate MOS transistor
- metal-insulator-semiconductor transistor
- metal-nitride-oxide-semiconductor transistor
- metal-oxide-semiconductor transistor
- micropower transistor
- monoiythic hot-electron transistor
- multiemitter transistor
- multiple-emitter transistor
- multiple integrated transistor
- n-channel MOS transistor
- negative-impedance transistor
- n-p-n transistor
- off transistor
- on transistor
- optical transistor
- optoelectronic transistor
- overlay transistor
- parasitic transistor
- pass-gate transistor
- p-channel MOS transistor
- p-channel transistor
- permeable-base transistor
- piezo transistor
- planar transistor
- planar epitaxial transistor
- plastic transistor
- p-n-p transistor
- pull-up transistor
- punch-through transistor
- quantum-effect transistor
- quantum wire transistor
- radio-frequency transistor
- recessed-gate MOS transistor
- recessed-gate transistor
- resonant-gate transistor
- Schottky transistor
- Schottky-barrier collector transistor
- Schottky collector transistor
- Schottky-diode clamped transistor
- Schottky gated transistor
- sealed transistor
- series-connectedtransistors
- seriestransistors
- shallow-junction transistor
- silicon-gate MOS transistor
- silicon-gate transistor
- silicon-on-sapphire transistor
- stacked transistor
- static induction transistor
- stepped electrode transistor
- superconducting transistor
- surface-barrier transistor
- surface-charge transistor
- switching-type transistor
- switching transistor
- tandem transistor
- thin-film transistor
- T-MOS transistor
- trap-controlled transistor
- tunnel emitter transistor
- unijunction transistor
- unipolar transistor
- vertical transistor
- XMOS transistor
- 3D trench transistorEnglish-Ukrainian dictionary of microelectronics > transistor
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8 FET
польовий транзистор, ПТ - bipolar inversion channel FET
- Bloch FET
- buried-channel FET
- charge-coupled FET
- closed-geometry FET
- compound FET
- conductor-insulator-semiconductor FET
- depletion-mode FET
- depletion FET
- dual-gate FET
- enhancement-modeFET
- enhancementFET
- floating-gate FET
- heterointerface FET
- heterostructure insulated-gate FET
- high-реrformance FET
- infrared FET
- insulated-gate FET
- ion-implanted FET
- ion-sensitive FET
- junction-gateFET
- junctionFET
- K-band FET
- lateral FET
- MBE FET
- metal-gate FET
- metal-insulator-semiconductor FET
- metal-охide-semiconductor
- metal-Schottky FET
- metal-semiconductor FET
- microwave FET
- modulation-doped FET
- multichannel FET
- multiple-gate finger FET
- nanometer-scale FET
- n-channel FET
- negative FET
- negative resistance FET
- normally-off FET
- normally-on FET
- offset-gate FET
- p-channel FET
- photosensitive FET
- photo FET
- p–n-junction FET
- positive-type FET
- resonant tunneling FET
- Schottky-diode FET
- Schottky-gate FET
- self-aligned gate FET
- self-aligned FET
- short-channel FET
- short gate-length FET
- silicon-gate FET
- tunneling-transfer FET
- two-dimensional electron-gas FET
- unipolar FET
- vertical-channel [vertical-structure] FET
- V-gate FET
- δ-doped FET
- δ FET -
9 oxide
1) оксид, оксид 2) діоксид кремнію, SiO2- Al aluminum oxide- Al oxide
- antimonous oxide
- antimony oxide
- arsenic oxide
- arsenous oxide
- beryllium oxide
- boric oxide
- boron oxide
- boron-implanted oxide
- buried oxide
- capping oxide
- channel oxide
- chemical vapor deposited oxide
- crossover oxide
- doped oxide
- electron-beam evaporated oxide
- emitter reach-through oxide
- evaporated oxide
- ferric oxide
- ferrous oxide
- field oxide
- gate oxide
- implanted oxide
- insulation oxide
- interfacial oxide
- iron oxide
- lead-strontium-copper oxide
- low-temperature oxide LTO
- low-temperature oxide
- magnesium oxide
- maskingoxide
- maskoxide
- MOS oxide
- multilevel oxide
- nitric oxide
- nitrided oxide
- nitrous oxide
- phosphorus doped oxide
- planar oxide
- poly oxide
- pyrolytic oxide
- rare-earth oxide
- recessed oxide
- refractory oxide
- screening oxide
- screen oxide
- semiconducting oxide
- semiconductor oxide
- semirecessed oxide
- shallow oxide
- silicon oxide
- stepped oxide
- stress-relief oxide
- thermally grown oxide
- thick oxide
- thin oxide
- tin oxide
- tunnel oxide -
10 gate
1. ім.1)логічний елемент; вентиль; логічна схема2) затвор (напр. польового транзистора); керуючий електрод3) пост; робоче місце4) селекторний [стробуючий] імпульс, строб-імпульс2. дієсл. здійснювати селекцію в часі, стробувати - AND gate
- AND–NOR gate
- AND-NOT gate
- AND-OR gate
- back gate
- Boolean gate
- channelless sea gates
- closed-geometry gate
- coincidence gate
- control gate
- digital logic gate
- digital summation threshold logic gate
- discrete gate
- doped polysilicon gate
- double-input gate
- DSTL gate
- emitter-coupled logic gate
- emitter-coupled gate
- equivalent gate
- erase gate
- exclusive NOR gate
- exclusive OR gate
- expandable gate
- fan-in gate
- fan-out gate
- fault-free gate
- faulty gate
- finger gate
- floating gate
- functional gate
- IIL gate
- I2L gate
- imaging gate
- inclusive OR gate
- inspectation gate
- intrinsic gate
- inverting gate
- isolated gate
- Josephson-junction logic gate
- Josephson logic gate
- Josephson tunneling logic gate
- logic gate
- majority gate
- meander gate
- MOS gate
- MOSFET gate
- multiple-level logic gate
- multiple-level gate
- NAND gate
- negation gate
- negative gate
- negative AND gate
- nitride gate
- NOR gate
- NOT gate
- n+ poly gate
- offset gate
- OR gate
- OR–NOT gate
- polycrystalline silicon gate
- polysilicon gate
- process control gate
- QA gate
- quantum interference Joseph-son gate
- recessed gate
- refractory-metal gate
- replicate/annihilate gate
- resistive gate
- Scholtky-barriergate
- Scholtkygate
- Scholtky TTL gate
- sea gates
- self-aligned gate
- self-registered gate
- single-input gate
- single -logic level gate
- single level gate
- single-poly gate
- stacked gate
- storage gate
- transfer gate
- transistor gate
- variable threshold logic gate
- variable threshold gate
- V-groove MOS gate
- p-gate -
11 polysilicon
полікристалічний кремній, полікремній (див. т-ж silicon) - p+ doped polysilicon
- self-aligned polysilicons
- silicided polysiliconEnglish-Ukrainian dictionary of microelectronics > polysilicon
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12 process
1. ім.1) процес; (технологічний) метод, спосіб2) технологія (див. т-ж technique, technology)3) (технологічна) обробка; технологічна операція2. дієсл. обробляти; проводити технологічну операцію - all-ion-implant process
- all-planar process
- Auger process
- batch process
- BH bias and hardness process
- BH process
- bonding process
- BOX process
- bulk CMOS process
- bumping process
- chip-on-board process
- closed CMOS process
- CMOS-on-sapphire process
- composite сеll logic process
- contact process
- conventional process
- deep охide isolation process
- DIFET process
- diffused eutectic aluminum process
- direct synthesis and crystal pull process
- double-diffused process
- double ion-implanted process
- double-layer polysilicon gate MOS process
- double-layer polysilicon gate process
- epitaxial deposition process
- epitaxial process
- epitaxial growth process
- flip-over process
- floating-gate silicon process
- front-end process
- gold-doped process
- guard-banded CMOS process
- heterogeneous process
- high-voltage process
- HMOS process
- imaging process
- implantation process
- in-house process
- interconnection process
- inverted meniscus process
- ion plating process
- isoplanar -S, -Z, -2 process
- isoplanar process
- junction-isolated process
- laser-recrystallized process
- lithographic process
- low-pressure process
- low VT process
- lost wafer process
- major process
- masking process
- master slice process
- mesa-isolation process
- metal-gate MOS process
- metal-gate process
- microbipolar LSI process
- micrometer-dimension process
- mid-film process
- Minimod process
- Mo-gate MOS process
- Mo-gate process
- nitride process
- nitrideless process
- NSA process
- oxide-film isolation process
- oxide isolated process
- oxygen refilling process
- patterning process
- phosphorous buried-emitter process
- photoablative process
- photolithography process
- photoresist process
- planar oxidation process
- Planox process
- plasma etch process
- Poly I process
- Poly II process
- Poly 5 process
- poly-oxide process
- Poly-Si process
- polysilicon-gate process
- poly-squared MOS process
- proprietary process
- PSA bipolar process
- PSA process
- refractory metal MOS process
- refractory metal process
- sacrificial охide process
- sapphire dielectric isolation process
- scaled Poly 5 process
- screen-and-fire process
- selective field-охidation process
- self-aligned gate process
- self-aligned process
- self-registered gate process
- self-registered process
- semi-additive process
- semiconductor-thermoplastic-dielectric process
- semicustom process
- shadow masking process
- silk-screen process
- single poly process
- SMOS process
- SOS/CMOS process
- stacked fuse bipolar process
- Stalicide process
- step-and-repeat process
- subtractive-fabrication process
- surface process
- Telemos process
- thermal process
- thermally асtivated surface process
- thermal-охidation process
- three-mask process
- triple-diffused process
- triply-poly process
- twin-tub process
- twin-well process
- V-groove MOS process
- V-groove process
- wet process
- 3-D process -
13 region
область; зона; ділянка (див. т-ж area, zone) - active TEG GaInAs region
- alloyed region
- avalanche region
- barrier region
- border region
- boundary region
- breakdown region
- buried region
- channel region
- channel stopреr region
- channel stop region
- charge-transfer region
- collector region
- conduction region
- conductor region
- cutoff region
- deep-UV region
- degenerate region
- depletion mode region
- depletion region
- deuterons implanted region
- diffusion-isolated region
- drain region
- drift region
- D-well region
- encroaching region
- enhanced region
- epitaxial region
- exposed region
- extrinsic region
- field region
- floating region
- forbidden region
- gate region
- graded region
- heavily-doped region
- high-conductivity region
- high-impurity region
- high-resistivity region
- hydrogenated region
- impurity region
- inactive region
- infrared region
- injection region
- injector region
- inset region
- insulation region
- insulator region
- interface region
- intrinsic region
- ion-implanted region
- island region
- isolation region
- junction region
- low-impurity region
- low-resistivity region
- multiplication region
- n region
- narrow-gap region
- near-UV region
- n-tab region
- ohmic contact region
- p region
- peripheral region
- periphery region
- polysilicon-on-охide region
- proton-damaged region
- proton implanted region
- reach-through region
- recessed охide region
- recombination region
- self-aligned regions
- shallow region
- shield region
- silicon-sapphire interface region
- softening region
- source region
- spreading-resistance region
- stack regions
- stepped-doping region
- storage region
- strip-like region
- strip-shaped region
- Strongly n-type region
- subcollector region
- subthreshold region
- superlattice region
- tank region
- terminating region
- thermally grown охide region
- transfer region
- transit-time region
- ultraviolet region
- V-groove region
- weak inversion region
- well region
- wide-gap region
См. также в других словарях:
phosphorous doped silicon dioxide — fosforu legiruotas silicio dioksidas statusas T sritis radioelektronika atitikmenys: angl. phosphorous doped silicon dioxide vok. phosphordotiertes Siliziumdioxid, n rus. диоксид кремния, легированный фосфором, m pranc. dioxyde de silicium dopé… … Radioelektronikos terminų žodynas
neutron-doped silicon — neutronais legiruotas silicis statusas T sritis radioelektronika atitikmenys: angl. neutron doped silicon vok. neutronendotiertes Silizium, n rus. нейтронно легированный кремний, m; трансмутационно легированный кремний, m pranc. silicium dopé par … Radioelektronikos terminų žodynas
silicon — /sil i keuhn, kon /, n. Chem. a nonmetallic element, having amorphous and crystalline forms, occurring in a combined state in minerals and rocks and constituting more than one fourth of the earth s crust: used in steelmaking, alloys, etc. Symbol … Universalium
Silicon — Not to be confused with the silicon containing synthetic polymer silicone. aluminium ← silicon → phosphorus C ↑ Si ↓ Ge … Wikipedia
doped — adjective a) Drugged. He was so doped after the surgery that it took him 2 hours to remember his name. b) Describing a semiconductor that has had small amounts of elements added to create charge carriers. The silicon was doped with boron to make… … Wiktionary
Polycrystalline silicon — Polycrystalline silicon, also called polysilicon, is a material consisting of small silicon crystals. It differs from single crystal silicon, used for electronics and solar cells, and from amorphous silicon, used for thin film devices and solar… … Wikipedia
Crystalline silicon — is a material consisting of one or more small silicon crystals. Polycrystalline silicon Polycrystalline silicon (or polysilicon, poly Si, or simply poly in context) is a material consisting of multiple small silicon crystals.Polycrystalline… … Wikipedia
Amorphous silicon — (a Si) is the non crystalline allotropic form of silicon. Silicon is a four fold coordinated atom that is normally tetrahedrally bonded to four neighboring silicon atoms. In crystalline silicon this tetrahedral structure is continued over a large … Wikipedia
Monocrystalline silicon — Unit cell of silicon; diamond cubic structure, lattice spacing 5.43071 Å … Wikipedia
Diode — Figure 1: Closeup of a diode, showing the square shaped semiconductor crystal (black object on left) … Wikipedia
Semiconductor — Citations missing|date=March 2008A semiconductor is a solid material that has electrical conductivity in between a conductor and an insulator; it can vary over that wide range either permanently or dynamically. [. They are used in many… … Wikipedia