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1 diode
діод - avalanche diode
- avalanche-injection diode
- avalanche-transit-time diode
- back-biased diode
- BARITT barrier-injection and transit-time diode
- BARITT diode
- barrier-injection and transit-time diode
- base-emitter diode
- buried Zener diode
- CATT diode
- charge-storage diode
- chip diode
- clamping diode
- clamp diode
- collector-base diode
- controlled avalanche-transit-time diode
- deep diode
- double-diffused diode
- emitter-base diode
- emitting diode
- Esaki diode
- gold-barrier Schottky diode
- graded-junction diode
- Gunn-еffectdiode
- Gunndiode
- heterojunction diode
- hot-carrier diode
- impact-avalanche and transit-time IMPATT diode
- impact-avalanche and transit-time diode
- intrinsic-barrier diode
- isolation diode
- laser diode
- light-emitting diode
- MBE diode
- mercury-probe-silicon diode
- mesa-type diode
- mesa diode
- negative-resistance diode
- negative diode
- organic-on-GaAs diode
- pin diode
- planar epitaxial diode
- punch-through diode
- Read diode
- reference diode
- reverse-biased diode
- Schottky-barrierdiode
- Schottkydiode
- shallow diode
- source-drain diode
- temperature-compensated diode
- TRAPATT trapped plasma avalanche transit-time diode
- TRAPATT diode
- trapped plasma avalanche transit-time diode
- variable-capacitance diode
- variable-reactance diode
- VC diode
- voltage-reference diode
- voltage-regulator diode
- Zener diode -
2 Esaki diode
тунельний діодEnglish-Ukrainian dictionary of microelectronics > Esaki diode
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3 junction
1) (р–n–)перехід 2) спай (термопари) 3) з’єднання; зчленовування - alloy junction
- back-to-back junctions
- backward biased junction
- barrier junction
- base-collector junction
- base-emitter junction
- blocking junction
- chip junction
- cold junction
- collector-basejunction
- collectorjunction
- degenerate junction
- depleted junction
- diffused junction
- diffusion junction
- diode junction
- doped junction
- drain-channel junction
- drain-substrate junction
- electrical junction
- emitter-base junction
- emitter junction
- epitaxial junction
- epitaxially grown junction
- Esaki junction
- floating junction
- forward-biased junction
- fused junction
- graded junction
- grown semiconductor junction
- grown junction
- heteroface junction
- heterogeneous junction
- heterogeneous junction
- high-low junction
- homogeneous junction
- hot junction
- hyperabrupt junction
- injector junction
- intrinsic-extrinsic junction
- ion-implanted junction
- isolation junction
- Josephson junction
- long-lifetime junction
- low-high junction
- low-lifetime junction
- metallurgical junction
- metal–semiconductor junction
- nonreclifying junction
- n–p junction
- ohmic junction
- photoresistive junction
- photovoltaic junction
- pin junction
- planar junction
- point-contact junction
- point-contact Josephson junction
- recessed junction
- recrystallized junction
- rectifying junction
- remelt junction
- reverse-biased junction
- Schottky barrier junction
- sealed junction
- semiconductor-barrier Josephson junction
- shallow junction
- soft junction
- source-channel junction
- source-substrate junction
- step junction
- superconducting junction
- temperature controlled junction
- thin-film Josephson junction
- tunneling junction
- tunnel junction
- unbiased junction
- vapor-phase grown junction
- vapor grown junction
- weak-link junctions
- Zener breakdown junction
См. также в других словарях:
diode Esaki — Esakio diodas statusas T sritis fizika atitikmenys: angl. Esaki diode vok. Esaki Diode, f rus. диод Есаки, m pranc. diode Esaki, f … Fizikos terminų žodynas
Esaki — Leo Esaki (jap. 江崎 玲於奈, Esaki Reona; * 12. März 1925 in Ōsaka) ist ein japanischer Physiker. Bekannt wurde er durch die Erfindung der Esaki Diode. Esaki studierte Physik auf der Universität Tokio und machte 1947 seinen Bachelor of Science, 1959… … Deutsch Wikipedia
Esaki Leo — Leo Esaki (jap. 江崎 玲於奈, Esaki Reona; * 12. März 1925 in Ōsaka) ist ein japanischer Physiker. Bekannt wurde er durch die Erfindung der Esaki Diode. Esaki studierte Physik auf der Universität Tokio und machte 1947 seinen Bachelor of Science, 1959… … Deutsch Wikipedia
Esaki Reona — Leo Esaki (jap. 江崎 玲於奈, Esaki Reona; * 12. März 1925 in Ōsaka) ist ein japanischer Physiker. Bekannt wurde er durch die Erfindung der Esaki Diode. Esaki studierte Physik auf der Universität Tokio und machte 1947 seinen Bachelor of Science, 1959… … Deutsch Wikipedia
Esaki diode — Esakio diodas statusas T sritis fizika atitikmenys: angl. Esaki diode vok. Esaki Diode, f rus. диод Есаки, m pranc. diode Esaki, f … Fizikos terminų žodynas
Esaki-Diode — Esakio diodas statusas T sritis fizika atitikmenys: angl. Esaki diode vok. Esaki Diode, f rus. диод Есаки, m pranc. diode Esaki, f … Fizikos terminų žodynas
Esaki-Diode — Esaki Diode, Tunneldiode … Universal-Lexikon
Esaki-Diode — Schaltzeichen Die Tunneldiode, 1957 entdeckt von dem Japaner Leo Esaki – deshalb auch Esaki Diode genannt, ist ein Hochfrequenz Halbleiterbauelement. Inhaltsverzeichnis 1 … Deutsch Wikipedia
Esaki, Leo — orig. Esaki Reiona born March 12, 1925, Ōsaka, Japan Japanese physicist. In 1956 he became chief physicist of the Sony Corp., and in 1960 he was awarded an IBM fellowship for further research in the U.S., subsequently joining IBM s research… … Universalium
Esaki , Leo — (1925–) Japanese physicist Born in the Japanese city of Osaka, Esaki graduated in physics at the University of Tokyo in 1947, gaining his doctorate there in 1959. His doctoral work was on the physics of semiconductors, and in 1958 he reported an… … Scientists
Diode — Figure 1: Closeup of a diode, showing the square shaped semiconductor crystal (black object on left) … Wikipedia