-
1 conduction
електропровідність, (електрична) провідність - bulk conduction
- defect conduction
- electrical conduction
- electron conduction
- extrinsic conduction
- forward-bias conduction
- heat conduction
- hole conduction
- hopping conduction
- impurity conduction
- intrinsic conduction
- n-type conduction
- p-type conduction
- thermal conductionEnglish-Ukrainian dictionary of microelectronics > conduction
-
2 distribution
- charge distribution
- congestion distribution
- cumulative service time distribution
- defect-density distribution
- degenerate distribution
- depth distribution
- dopant distribution
- doping distribution
- electron energy distribution
- error-function distribution
- Fermi distribution
- field distribution
- Gaussian distribution
- impurity distribution
- nondegenerate distribution
- Maxwell distribution
- power distribution
- space [spatial] distribution
- velocity distribution
- 3-D distributionEnglish-Ukrainian dictionary of microelectronics > distribution
-
3 level
1. ім.1) рівень2) ступінь (напр. інтеграції)2. дієсл. вирівнювати, розрівнювати - acceptor energy level
- algorithmic level
- allowed level
- automation level
- behavioral level
- chip complexity level
- chip level
- circuit level
- circuit complexity level
- complexity level
- concentration level
- confidence level
- damage level
- dc level
- deep level
- defect level
- degenerate level
- discrete energy level
- discrete level
- donor energy level
- doping level
- dynamic level
- electrical level
- electron quasi-Fermi level
- empty level
- filled level
- functional level
- functionality level
- gate level
- hole quasi-Fermi level
- impurity level
- input level
- integration level
- interconnection level
- logic level
- logical one level
- logical zero level
- logic gate level
- mask level
- masking level
- metallization level
- noise level
- occupied level
- register transfer level
- resistivity level
- saturation level
- shallow level
- sheet-resistance level
- steady-state level
- submicron level
- superficial level
- switch level
- transistor switch level
- trapping level
- TTL level
- two-resist level
- unfilled level
- unknown logic level
- vacant level
- wafer level -
4 silicon
кремній, Si - bare silicon
- black silicon
- boron-implanted silicon
- bulk silicon
- capped silicon
- counterdoped silicon
- CVD silicon
- CZ silicon
- Czochralski silicon
- doped silicon
- electron-irradiated silicon
- epitaxial silicon
- floating-zone FZ silicon
- float-zone FZ silicon
- floating-zone silicon
- float-zone silicon
- germanium hardened silicon
- glow-discharge silicon
- high-resistivity silicon
- hydrogenated amorphous silicon
- implantation-amorphised silicon
- ion-implanted silicon
- microcrystalline silicon
- native silicon
- n+ diffused silicon
- neutron-doped silicon
- semiconductor-grade silicon
- silicided silicon
- single-crystal silicon
- zero-defect silicon
- 111 silicon
См. также в других словарях:
defect electron — elektroninė skylė statusas T sritis fizika atitikmenys: angl. defect electron; electron hole; electron vacancy vok. Defektelektron, n; Elektronenleerstelle, f; Elektronenloch, n rus. электронная дырка, f pranc. lacune électronique, f; trou… … Fizikos terminų žodynas
defect electron conduction — skylinis laidumas statusas T sritis fizika atitikmenys: angl. defect electron conduction; hole conduction; p type conduction vok. Defektelektronenleitung, f; p Leitfähigkeit, f rus. дырочная проводимость, f; проводимость p типа, f pranc.… … Fizikos terminų žodynas
electron hole — elektroninė skylė statusas T sritis fizika atitikmenys: angl. defect electron; electron hole; electron vacancy vok. Defektelektron, n; Elektronenleerstelle, f; Elektronenloch, n rus. электронная дырка, f pranc. lacune électronique, f; trou… … Fizikos terminų žodynas
electron vacancy — elektroninė skylė statusas T sritis fizika atitikmenys: angl. defect electron; electron hole; electron vacancy vok. Defektelektron, n; Elektronenleerstelle, f; Elektronenloch, n rus. электронная дырка, f pranc. lacune électronique, f; trou… … Fizikos terminų žodynas
Electron beam induced current — (EBIC) is a semiconductor analysis technique performed in a scanning electron microscope (SEM) or scanning transmission electron microscope (STEM). It is used to identify buried junctions or defects in semiconductors, or to examine minority… … Wikipedia
Electron mobility — This article is about the mobility for electrons and holes in metals and semiconductors. For the general concept, see Electrical mobility. In solid state physics, the electron mobility characterizes how quickly an electron can move through a… … Wikipedia
Electron microscope — Diagram of a transmission electron microscope A 197 … Wikipedia
Electron backscatter diffraction — An electron backscatter diffraction pattern An electron backscatter diffraction pattern of monocrystalline silicon, taken … Wikipedia
Crystallographic defect — Crystalline solids exhibit a periodic crystal structure. The positions of atoms or molecules occur on repeating fixed distances, determined by the unit cell parameters. However, the arrangement of atom or molecules in most crystalline materials… … Wikipedia
Transmission electron microscopy — A TEM image of the polio virus. The polio virus is 30 nm in size.[1] Transmission electron microscopy (TEM) is a microscopy technique whereby a beam of electrons is transmitted through an ultra thin specimen, interacting with the specimen as it… … Wikipedia
Defektelektron — elektroninė skylė statusas T sritis fizika atitikmenys: angl. defect electron; electron hole; electron vacancy vok. Defektelektron, n; Elektronenleerstelle, f; Elektronenloch, n rus. электронная дырка, f pranc. lacune électronique, f; trou… … Fizikos terminų žodynas
