-
1 device
1) прилад (напр. ІС, транзистор, діод); компонент; елемент 2) пристрій - active device
- add-on device
- analog device
- array device
- attached device
- backup device
- beam-leadeddevice
- beam-leaddevice
- bipolar device
- bipolar-MOS device
- blown-fuse device
- bubble-domain device
- bubble- device
- bucket-brigade device
- bulk асoustic-wave device
- bulk-channel carrier-transfer device
- bulk-effect device
- carrier-transfer device
- charge-coupled device
- charge-domain device
- charge-injection device
- charge-priming device
- charge-transfer device
- chip-and-wire device
- CMOS device
- CMOS/SOS device
- compound-semiconductor device
- contiguous-disk device
- controlled surface device
- custom-designed device
- custom device
- dense device
- depletion-modedevice
- depletiondevice
- dielectric isolation device
- diffused device
- discrete device
- double-diffused MOS device
- elastic-surface-wave device
- electrooptic device
- elementary device
- enchancement-mode device
- enchancement device
- end-use device
- epiplanar device
- epitaxial device
- FAMOS device
- field-effect device
- field-programmable device
- FIMOS device
- functional device
- graded-gap semiconductor device
- graded-gap device
- Gurm-effect device
- Gurm device
- Hall-effectdevice
- Halldevice
- hardeneddevice
- harddevice
- heteroepitaxial device
- heterojunction device
- high-gain device
- high-immunity noise device
- high-technology device
- high-threshold device
- homojunction device
- hybrid high-power device
- identification device
- I2L device
- image [imaging] device
- IMPATT device
- implanted device
- integrated-optic device
- integrated semiconductor device
- integration device
- interdigitated device
- interface device
- Josephson-junctiondevice
- Josephsondevice
- Josephson logic device
- junction-isolated device
- large-scale integrated device
- large-scale integration device
- latch-up free CMOS device
- leaded device
- leadless inverted device
- light-wave device
- locked-in device
- logic array device
- low-power Schottky device
- magnetostatic-wave device
- majority-carrier device
- mask-programmable device
- metal-masked device
- metal-semiconductor device
- microdiscrete device
- microelectronic device
- minority-carrier device
- MIS-type device
- MIS device
- mixed-process device
- mixed device
- molecular-beam epitaxy-based device
- monolithic device
- MOS device
- MTL device
- multilayered device
- multilevel device
- n-channel MOS device
- n-channel device
- negative-resistance device
- non-CPU device
- n–p–n device
- off-chip device
- on-chip device
- optocoupler semiconductor device
- optocoupling device
- passive device
- p-channel MOS device
- p-channel device
- peripheral device
- permalloy bubble device
- permalloy T-bar device
- photo-coupled semiconductor device
- photosensitive device
- piezoelectric device
- piggyback device
- planar device
- plotting device
- plug-in device
- p-n-p device
- positioning device
- printing device
- programmable logic-array device
- programmable device
- quantum device
- quantum-well device
- redundancy device
- resin-molded device
- SAW device
- SAW delay device
- scaled-downdevice
- scaleddevice
- Schottky-barrier device
- Schottky device
- second-source device
- self-aligned semiconductor device
- semiconductor-on-sapphire
- silicon-on-dielectric device
- silicon-on-insulator device
- silicon-on-sapphire device
- single device
- single-crystal device
- slow device
- SLS device
- small-geometry device
- solder-evacuator device
- SOS/MOS device
- stacked semiconductor device
- static-sensitive device
- stripeline device
- submicron-scale MOS device
- superconducting Josephson-junction device
- superconducting quantum interference device
- superconductive quantum interferometric device
- super-lattice functional device
- superstructure device
- surface-acoustic-wave device
- surface charge-transfer device
- surface-mounted device
- switching device
- TAB device
- thermocompression bonded device
- thick-film device
- thin-film device
- transcalent device
- transferred-electron device
- transil-time-negative-resistance device
- trench isolated device
- tunnel -еffect device
- tunnel device
- two-level polysilicon MOS device
- ULA device
- ultrafine-scale device
- ultra-large-scale integrated device
- ultra-submicron device
- uncased device
- vertical-junction device
- very large-scale integrated-circuit device
- very large-scale integration device
- V-groove MOS device
- V-groove device
- wafer-printing device -
2 register
1. ім.1)регістр2) (точне) суміщення2. дієсл.1) реєструвати2) (точно) суміщати- address register
- bucket-brigade device register
- bucket-brigade register
- charge-coupled device register
- charge-coupled register
- charge-transfer device register
- charge-transfer register
- check register
- circulating shift register
- circulating register
- code register
- command register
- control register
- control status register
- CRC shift register
- data register
- feedback register
- feed-forward register
- flip-flop register
- interconnected registers
- interrupt register
- master-slave register
- memory register
- molecular shift register
- number register
- on-chip register
- quadruple-length register
- readout register
- shift register
- state variables register
- successive approximation register SAR
- successive approximation register
- word register -
3 memory
пам’ять; запам’ятовуючий пристрій, ЗП - add-on memory
- array memory
- AS memory
- associate memory
- auxiliary memory
- backing memory
- beam-addressed memory
- bipolar memory
- block-oriented memory
- bucket-brigade memory
- buffer memory
- byte-wide random-access memory
- chalcogenide memory
- charge-coupled device memory
- charge-coupled memory
- charge packed memory
- charge-pumping memory
- CMOS/SOS memory
- content-addressable memory
- contiguous-disk bubble memory
- control memory
- cross-tie memory
- cryoelectronic memory
- cryogenic memory
- cryotron memory
- current-асcess magnetic-bubble memory
- destructive memory
- direct addressable memory
- dynamic memory
- electrically-alterable read-only memory
- electrically-erasable memory
- electronic-beam addressable memory
- emitter-coupled logic compatible memory
- erasable programmable readonly memory
- external memory
- factory-programmable read-only memory
- fast memory
- field-programmable read-only memory
- fixed memory
- fractional memory
- full wafer memory
- fusible-link programmable readonly memory
- general-purpose memory
- high-density memory
- high-speed memory
- IC memory
- I2L memory
- laser-programmed memory
- line-addressable random-access memory
- magnetic-bubble memory
- magnetic-film memory
- magnetooptic memory
- magnetoresistive random-асcess memoryies MRAMS
- magnetoresistive random-асcess memoryies
- mask-programmed memory
- mass-storagememory
- massmemory
- matrix memory
- microprogram memory
- molecular memory
- moving-domain memory
- MTL memory
- multichip memory
- multilevel memory
- nano memory
- nondestructive memory
- nonvolatile memory
- object-oriented memory
- off-chip memory
- on-chip memory
- one-transistor memory
- optical memory
- ovonic memory
- permanent memory
- polymer memory
- power-down memory
- programmable read-only memory
- pseudostatic memory
- random access memory
- read-mostly memory
- read-only memory
- registered programmable readonly memory
- reprogrammable memory
- Schottky programmable readonly memory
- scratch-pad memory
- self-refreshing memory
- semiconductor memory
- semipermanent memory
- solid-state memory
- stack memory
- static memory
- static-induction transistor memory
- superconductor memory
- supercurrent memory
- superdense memory
- superhigh-speed memory
- three-dimensional memory
- ultradense memory
- ultraviolet erasable memory
- VLSI memory
- volatile memory
- zeropower memory
См. также в других словарях:
Charge-coupled device — A specially developed CCD used for ultraviolet imaging in a wire bonded package. A charge coupled device (CCD) is a device for the movement of electrical charge, usually from within the device to an area where the charge can be manipulated, for… … Wikipedia
Bucket-brigade device — A bucket brigade or bucket brigade device (BBD) is a discrete time analogue delay line,[1] developed in 1969 by F. Sangster and K. Teer of the Philips Research Labs. It consists of a series of capacitance sections C0 to Cn. The stored analogue… … Wikipedia
Bucket Brigade Device — A Bucket Brigade is an analogue delay line, developed in 1969 by F. Sangster and K. Teer of the Philips Research Labs. It consists of a series of capacitances C0 to Cn. The stored analogue signal is moved along the line of capacitors one step at… … Wikipedia
Bucket brigade — A Bucket brigade is a method for transporting items where items are passed from one stationary person to the next. More specifically, it refers to a method of firefighting before the advent of hand pumped fire engines, whereby firefighters would… … Wikipedia
Bucket Brigade Device — Ein Eimerkettenspeicher (engl. bucket brigade memory (BBM) oder auch bucket brigade device (BBD)) ist eine analoge Schaltung zum Ladungstransport nach dem Eimerkettenprinzip. Wie bei einer Eimerkette werden dabei die Ladungen der einzelnen… … Deutsch Wikipedia
Laufzeitspeicher — Verzögerungsleitungen (engl. delay line) dienen der Zeitverschiebung oder temporären Speicherung (Laufzeitspeicher) eines seriellen Signales (analog oder digital) mittels der Signallaufzeit in einer elektrischen Leitung bestimmter Länge oder auch … Deutsch Wikipedia
VZL — Verzögerungsleitungen (engl. delay line) dienen der Zeitverschiebung oder temporären Speicherung (Laufzeitspeicher) eines seriellen Signales (analog oder digital) mittels der Signallaufzeit in einer elektrischen Leitung bestimmter Länge oder auch … Deutsch Wikipedia
Verzögerungsschalter — Verzögerungsleitungen (engl. delay line) dienen der Zeitverschiebung oder temporären Speicherung (Laufzeitspeicher) eines seriellen Signales (analog oder digital) mittels der Signallaufzeit in einer elektrischen Leitung bestimmter Länge oder auch … Deutsch Wikipedia
Verzögerungsspeicher — Verzögerungsleitungen (engl. delay line) dienen der Zeitverschiebung oder temporären Speicherung (Laufzeitspeicher) eines seriellen Signales (analog oder digital) mittels der Signallaufzeit in einer elektrischen Leitung bestimmter Länge oder auch … Deutsch Wikipedia
Eimerkettenprinzip — Ein Eimerkettenspeicher (engl. bucket brigade memory (BBM) oder auch bucket brigade device (BBD)) ist eine analoge Schaltung zum Ladungstransport nach dem Eimerkettenprinzip. Wie bei einer Eimerkette werden dabei die Ladungen der einzelnen… … Deutsch Wikipedia
Verzögerungsleitung — Verzögerungsleitungen (englisch delay line, Korrekt: Laufzeitleitung) dienen der Zeitverschiebung oder temporären Speicherung (Laufzeitspeicher) eines seriellen Signales (analog oder digital) mittels der Signallaufzeit in einer elektrischen… … Deutsch Wikipedia