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1 FET
польовий транзистор, ПТ - bipolar inversion channel FET
- Bloch FET
- buried-channel FET
- charge-coupled FET
- closed-geometry FET
- compound FET
- conductor-insulator-semiconductor FET
- depletion-mode FET
- depletion FET
- dual-gate FET
- enhancement-modeFET
- enhancementFET
- floating-gate FET
- heterointerface FET
- heterostructure insulated-gate FET
- high-реrformance FET
- infrared FET
- insulated-gate FET
- ion-implanted FET
- ion-sensitive FET
- junction-gateFET
- junctionFET
- K-band FET
- lateral FET
- MBE FET
- metal-gate FET
- metal-insulator-semiconductor FET
- metal-охide-semiconductor
- metal-Schottky FET
- metal-semiconductor FET
- microwave FET
- modulation-doped FET
- multichannel FET
- multiple-gate finger FET
- nanometer-scale FET
- n-channel FET
- negative FET
- negative resistance FET
- normally-off FET
- normally-on FET
- offset-gate FET
- p-channel FET
- photosensitive FET
- photo FET
- p–n-junction FET
- positive-type FET
- resonant tunneling FET
- Schottky-diode FET
- Schottky-gate FET
- self-aligned gate FET
- self-aligned FET
- short-channel FET
- short gate-length FET
- silicon-gate FET
- tunneling-transfer FET
- two-dimensional electron-gas FET
- unipolar FET
- vertical-channel [vertical-structure] FET
- V-gate FET
- δ-doped FET
- δ FET
См. также в других словарях:
Metal–insulator transition — Metal insulator transitions are transitions from a metal (material with good electrical conductivity of electric charges) to an insulator (material where conductivity of charges is quickly suppressed). These transitions can be achieved by tuning… … Wikipedia
metal-insulator-semiconductor structure — metalo dielektriko puslaidininkio darinys statusas T sritis radioelektronika atitikmenys: angl. metal insulator semiconductor structure vok. Metall Isolator Halbleiter Struktur, f rus. структура металл диэлектрик полупроводник, f pranc. structure … Radioelektronikos terminų žodynas
bulk metal-insulator-semiconductor structure — tūrinis MDP darinys statusas T sritis radioelektronika atitikmenys: angl. bulk metal insulator semiconductor structure; bulk MIS structure vok. Volumen Metall Isolator Halbleiter Struktur, f; Volumen MIS Struktur, f rus. объёмная МДП структура, f … Radioelektronikos terminų žodynas
thermal nitridation metal-insulator-semiconductor — termiškai nitridintas MDP darinys statusas T sritis radioelektronika atitikmenys: angl. thermal nitridation metal insulator semiconductor; thermal nitridation MIS structure vok. MOS Struktur mit thermischer Nitrierung, f rus. МДП структура с… … Radioelektronikos terminų žodynas
complementary metal-insulator-semiconductor — jungtinis MDP darinys statusas T sritis radioelektronika atitikmenys: angl. complementary metal insulator semiconductor; complementary MIS; complementary MIS structure vok. komplementäre MIS Struktur, f rus. комплементарная МДП структура, f pranc … Radioelektronikos terminų žodynas
semiconductor device — ▪ electronics Introduction electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… … Universalium
Semiconductor device — Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most … Wikipedia
structure métal-isolant-semi-conducteur à nitruration thermique — termiškai nitridintas MDP darinys statusas T sritis radioelektronika atitikmenys: angl. thermal nitridation metal insulator semiconductor; thermal nitridation MIS structure vok. MOS Struktur mit thermischer Nitrierung, f rus. МДП структура с… … Radioelektronikos terminų žodynas
structure métal-isolant-semi-conducteur — metalo dielektriko puslaidininkio darinys statusas T sritis radioelektronika atitikmenys: angl. metal insulator semiconductor structure vok. Metall Isolator Halbleiter Struktur, f rus. структура металл диэлектрик полупроводник, f pranc. structure … Radioelektronikos terminų žodynas
structure métal-isolant-semi-conducteur complémentaire — jungtinis MDP darinys statusas T sritis radioelektronika atitikmenys: angl. complementary metal insulator semiconductor; complementary MIS; complementary MIS structure vok. komplementäre MIS Struktur, f rus. комплементарная МДП структура, f pranc … Radioelektronikos terminų žodynas
structure MIS de volume — tūrinis MDP darinys statusas T sritis radioelektronika atitikmenys: angl. bulk metal insulator semiconductor structure; bulk MIS structure vok. Volumen Metall Isolator Halbleiter Struktur, f; Volumen MIS Struktur, f rus. объёмная МДП структура, f … Radioelektronikos terminų žodynas