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1 floating gate
плаваючий затвор (МОН-структури)English-Ukrainian dictionary of microelectronics > floating gate
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2 floating-gate element
елемент з плаваючим затворомEnglish-Ukrainian dictionary of microelectronics > floating-gate element
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3 floating-gate FET
польовий транзистор з плаваючим затворомEnglish-Ukrainian dictionary of microelectronics > floating-gate FET
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4 floating-gate MOS
МОН-структура з плаваючим затворомEnglish-Ukrainian dictionary of microelectronics > floating-gate MOS
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5 floating-gate MOS transistor
МОН-транзистор з плаваючим затворомEnglish-Ukrainian dictionary of microelectronics > floating-gate MOS transistor
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6 floating-gate silicon process
технологія МОН ІС з плаваючими кремнієвими затворамиEnglish-Ukrainian dictionary of microelectronics > floating-gate silicon process
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7 floating-gate storage
ЗП на МОН-транзисторах з плаваючим затворомEnglish-Ukrainian dictionary of microelectronics > floating-gate storage
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8 gate
1. ім.1)логічний елемент; вентиль; логічна схема2) затвор (напр. польового транзистора); керуючий електрод3) пост; робоче місце4) селекторний [стробуючий] імпульс, строб-імпульс2. дієсл. здійснювати селекцію в часі, стробувати - AND gate
- AND–NOR gate
- AND-NOT gate
- AND-OR gate
- back gate
- Boolean gate
- channelless sea gates
- closed-geometry gate
- coincidence gate
- control gate
- digital logic gate
- digital summation threshold logic gate
- discrete gate
- doped polysilicon gate
- double-input gate
- DSTL gate
- emitter-coupled logic gate
- emitter-coupled gate
- equivalent gate
- erase gate
- exclusive NOR gate
- exclusive OR gate
- expandable gate
- fan-in gate
- fan-out gate
- fault-free gate
- faulty gate
- finger gate
- floating gate
- functional gate
- IIL gate
- I2L gate
- imaging gate
- inclusive OR gate
- inspectation gate
- intrinsic gate
- inverting gate
- isolated gate
- Josephson-junction logic gate
- Josephson logic gate
- Josephson tunneling logic gate
- logic gate
- majority gate
- meander gate
- MOS gate
- MOSFET gate
- multiple-level logic gate
- multiple-level gate
- NAND gate
- negation gate
- negative gate
- negative AND gate
- nitride gate
- NOR gate
- NOT gate
- n+ poly gate
- offset gate
- OR gate
- OR–NOT gate
- polycrystalline silicon gate
- polysilicon gate
- process control gate
- QA gate
- quantum interference Joseph-son gate
- recessed gate
- refractory-metal gate
- replicate/annihilate gate
- resistive gate
- Scholtky-barriergate
- Scholtkygate
- Scholtky TTL gate
- sea gates
- self-aligned gate
- self-registered gate
- single-input gate
- single -logic level gate
- single level gate
- single-poly gate
- stacked gate
- storage gate
- transfer gate
- transistor gate
- variable threshold logic gate
- variable threshold gate
- V-groove MOS gate
- p-gate -
9 FET
польовий транзистор, ПТ - bipolar inversion channel FET
- Bloch FET
- buried-channel FET
- charge-coupled FET
- closed-geometry FET
- compound FET
- conductor-insulator-semiconductor FET
- depletion-mode FET
- depletion FET
- dual-gate FET
- enhancement-modeFET
- enhancementFET
- floating-gate FET
- heterointerface FET
- heterostructure insulated-gate FET
- high-реrformance FET
- infrared FET
- insulated-gate FET
- ion-implanted FET
- ion-sensitive FET
- junction-gateFET
- junctionFET
- K-band FET
- lateral FET
- MBE FET
- metal-gate FET
- metal-insulator-semiconductor FET
- metal-охide-semiconductor
- metal-Schottky FET
- metal-semiconductor FET
- microwave FET
- modulation-doped FET
- multichannel FET
- multiple-gate finger FET
- nanometer-scale FET
- n-channel FET
- negative FET
- negative resistance FET
- normally-off FET
- normally-on FET
- offset-gate FET
- p-channel FET
- photosensitive FET
- photo FET
- p–n-junction FET
- positive-type FET
- resonant tunneling FET
- Schottky-diode FET
- Schottky-gate FET
- self-aligned gate FET
- self-aligned FET
- short-channel FET
- short gate-length FET
- silicon-gate FET
- tunneling-transfer FET
- two-dimensional electron-gas FET
- unipolar FET
- vertical-channel [vertical-structure] FET
- V-gate FET
- δ-doped FET
- δ FET -
10 MOS
структура метал–оксид–напівпровідник, МОН-структура - aluminum-gate MOS
- avalanche-injection stacked gate MOS
- avalanche stacked gate MOS
- back-gate MOS
- bulk complementary MOS
- buried-channel MOS
- buried-oxide MOS
- clocked complementary MOS
- complementary symmetry MOS
- complementary MOS
- composite-gate MOS
- depletion MOS
- dielectric-insulated MOS
- dielectric-isolated MOS
- double-diffused MOS
- double-implanted MOS
- double-level polysilicon MOS
- elevated-electrode MOS
- enhancement MOS
- floating-gate MOS
- grooved-gate MOS
- high-threshold MOS
- high-voltage MOS
- ion-implanted MOS
- lateral-merged bipolar MOS
- low-threshold MOS
- merged MOS
- multigate MOS
- n-channelMOS
- nMOS
- p-channelMOS
- pMOS
- polycrystalline silicon-gate MOS
- quadruply self-aligned MOS
- refractory MOS
- resistive-gate MOS
- scaled MOS
- Schottky-barrier MOS
- self-aligned MOS
- silicon-gate MOS
- single-channel MOS
- single-poly gate MOS
- substrate-fed MOS
- vertical MOS
- V-groove MOS
- V-notch MOS -
11 transistor
транзистор - abrupt heterojunction bipolar transistor
- access transistor
- amorphous transistor
- avalanche-injector MOS transistor
- ballistic transistor
- barrier-emitter transistor
- beam-lead transistor
- bipolar junction transistor
- bipolar transistor
- bipolar quantum resonant tunneling transistor
- buried-channel MOS transistor
- buried-channel transistor
- buried-oxide MOS transistor
- charge-injection transistor
- chip transistor
- chip-and-wire transistor
- clamped transistor
- closed-gate MOS transistor
- collector-grounded transistor
- common-base transistor
- common-collector transistor
- common-emitter transistor
- complementary transistors
- composite transistor
- Darlington transistor
- deep depletion transistor
- deep-diode transistor
- depletion-mode MOS transistor
- depletion MOS transistor
- diffused-emitter-and-base transistor
- diffused planar transistor
- δ-doped field-effect transistor
- double-diffused MOS transistor
- double-heterojunction bipolar transistor
- double-implanted MOS transistor
- downward-scaled MOS transistor
- electrostatic induction transistor
- emitter-coupled transistor
- enhancement-mode MOS transistor
- enhancement MOS transistor
- epibase transistor
- epitaxial planar transistor
- epitaxial transistor
- fan-out transistor
- fast switching transistor
- field-effect transistor
- filamentary transistor
- floating-gate MOS transistor
- front-end transistor
- gate-modulated bipolar transistor
- GIMIC transistor
- grooved-gate MOS transistor
- heterojunction transistor
- high-electron mobility transistor
- high-performance transistor
- H-MOS transistor
- homojunction transistor
- hot-electron transistor
- integrated circuit transistor
- integrated transistor
- interdigitated transistor
- inverted transistor
- ion-implanted base transistor
- ion sensitive field effect transistor ISFET
- ion sensitive field effect transistor
- junction transistor
- lateral transistor
- load transistor
- low-power transistor
- memory transistor
- merged transistor
- mesa-typetransistor
- mesatransistor
- mesh-emitter transistor
- metal-alumina-semiconductor transistor
- metal-base transistor
- metal-gate MOS transistor
- metal-insulator-semiconductor transistor
- metal-nitride-oxide-semiconductor transistor
- metal-oxide-semiconductor transistor
- micropower transistor
- monoiythic hot-electron transistor
- multiemitter transistor
- multiple-emitter transistor
- multiple integrated transistor
- n-channel MOS transistor
- negative-impedance transistor
- n-p-n transistor
- off transistor
- on transistor
- optical transistor
- optoelectronic transistor
- overlay transistor
- parasitic transistor
- pass-gate transistor
- p-channel MOS transistor
- p-channel transistor
- permeable-base transistor
- piezo transistor
- planar transistor
- planar epitaxial transistor
- plastic transistor
- p-n-p transistor
- pull-up transistor
- punch-through transistor
- quantum-effect transistor
- quantum wire transistor
- radio-frequency transistor
- recessed-gate MOS transistor
- recessed-gate transistor
- resonant-gate transistor
- Schottky transistor
- Schottky-barrier collector transistor
- Schottky collector transistor
- Schottky-diode clamped transistor
- Schottky gated transistor
- sealed transistor
- series-connectedtransistors
- seriestransistors
- shallow-junction transistor
- silicon-gate MOS transistor
- silicon-gate transistor
- silicon-on-sapphire transistor
- stacked transistor
- static induction transistor
- stepped electrode transistor
- superconducting transistor
- surface-barrier transistor
- surface-charge transistor
- switching-type transistor
- switching transistor
- tandem transistor
- thin-film transistor
- T-MOS transistor
- trap-controlled transistor
- tunnel emitter transistor
- unijunction transistor
- unipolar transistor
- vertical transistor
- XMOS transistor
- 3D trench transistorEnglish-Ukrainian dictionary of microelectronics > transistor
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12 process
1. ім.1) процес; (технологічний) метод, спосіб2) технологія (див. т-ж technique, technology)3) (технологічна) обробка; технологічна операція2. дієсл. обробляти; проводити технологічну операцію - all-ion-implant process
- all-planar process
- Auger process
- batch process
- BH bias and hardness process
- BH process
- bonding process
- BOX process
- bulk CMOS process
- bumping process
- chip-on-board process
- closed CMOS process
- CMOS-on-sapphire process
- composite сеll logic process
- contact process
- conventional process
- deep охide isolation process
- DIFET process
- diffused eutectic aluminum process
- direct synthesis and crystal pull process
- double-diffused process
- double ion-implanted process
- double-layer polysilicon gate MOS process
- double-layer polysilicon gate process
- epitaxial deposition process
- epitaxial process
- epitaxial growth process
- flip-over process
- floating-gate silicon process
- front-end process
- gold-doped process
- guard-banded CMOS process
- heterogeneous process
- high-voltage process
- HMOS process
- imaging process
- implantation process
- in-house process
- interconnection process
- inverted meniscus process
- ion plating process
- isoplanar -S, -Z, -2 process
- isoplanar process
- junction-isolated process
- laser-recrystallized process
- lithographic process
- low-pressure process
- low VT process
- lost wafer process
- major process
- masking process
- master slice process
- mesa-isolation process
- metal-gate MOS process
- metal-gate process
- microbipolar LSI process
- micrometer-dimension process
- mid-film process
- Minimod process
- Mo-gate MOS process
- Mo-gate process
- nitride process
- nitrideless process
- NSA process
- oxide-film isolation process
- oxide isolated process
- oxygen refilling process
- patterning process
- phosphorous buried-emitter process
- photoablative process
- photolithography process
- photoresist process
- planar oxidation process
- Planox process
- plasma etch process
- Poly I process
- Poly II process
- Poly 5 process
- poly-oxide process
- Poly-Si process
- polysilicon-gate process
- poly-squared MOS process
- proprietary process
- PSA bipolar process
- PSA process
- refractory metal MOS process
- refractory metal process
- sacrificial охide process
- sapphire dielectric isolation process
- scaled Poly 5 process
- screen-and-fire process
- selective field-охidation process
- self-aligned gate process
- self-aligned process
- self-registered gate process
- self-registered process
- semi-additive process
- semiconductor-thermoplastic-dielectric process
- semicustom process
- shadow masking process
- silk-screen process
- single poly process
- SMOS process
- SOS/CMOS process
- stacked fuse bipolar process
- Stalicide process
- step-and-repeat process
- subtractive-fabrication process
- surface process
- Telemos process
- thermal process
- thermally асtivated surface process
- thermal-охidation process
- three-mask process
- triple-diffused process
- triply-poly process
- twin-tub process
- twin-well process
- V-groove MOS process
- V-groove process
- wet process
- 3-D process -
13 element
1) елемент; компонент; прилад; інтегральна схема, ІС (див. т-ж chip, circuit, component) 2) (хімічний) елемент - array element
- capacitive-storage element
- chevron propagating element
- chip element
- circuit element
- column III & V element
- combinational logic element
- control element
- cryogenic element
- distributed element
- doping element
- electronic element
- field-effect-transistor element
- floating-gate element
- functional element
- fuse element
- generic element
- Gunn element
- Hall element
- image element
- impurity element
- inclusive OR element
- integrated element
- inverting element
- Josephson junction element
- key element
- library element
- light-emitting semiconductor element
- light-receiving element
- linear element
- logical element
- lumped-circuit element
- magnetic propagation element
- majority element
- march element
- matrix element
- memory element
- microcircuit element
- microelectronic element
- monolithic element
- multiple logic element
- NAND element
- NAND-NOR element
- negative-resistance element
- network element
- nonlinear element
- one-transistor element
- optoelectronic element
- parasitic element
- passive element
- pattern element
- phantom element
- picture element
- propagating element
- propagation element
- redundant element
- resolution element
- semiconductor element
- shared element
- solid-state element
- stripe-geometry element
- superconducting element
- thick-film element
- thin-film element
- ultratrace element -
14 storage
1) запам’ятовуючий пристрій, ЗП; пам’ять 2) запам’ятовування, зберігання; накопичення - coordinate-addressable storage
- data storage
- demountable storage
- dynamic storage
- extended core storage
- floating-gate storage
- monolithic storage
- random-асcess storage
- read-only storage -
15 region
область; зона; ділянка (див. т-ж area, zone) - active TEG GaInAs region
- alloyed region
- avalanche region
- barrier region
- border region
- boundary region
- breakdown region
- buried region
- channel region
- channel stopреr region
- channel stop region
- charge-transfer region
- collector region
- conduction region
- conductor region
- cutoff region
- deep-UV region
- degenerate region
- depletion mode region
- depletion region
- deuterons implanted region
- diffusion-isolated region
- drain region
- drift region
- D-well region
- encroaching region
- enhanced region
- epitaxial region
- exposed region
- extrinsic region
- field region
- floating region
- forbidden region
- gate region
- graded region
- heavily-doped region
- high-conductivity region
- high-impurity region
- high-resistivity region
- hydrogenated region
- impurity region
- inactive region
- infrared region
- injection region
- injector region
- inset region
- insulation region
- insulator region
- interface region
- intrinsic region
- ion-implanted region
- island region
- isolation region
- junction region
- low-impurity region
- low-resistivity region
- multiplication region
- n region
- narrow-gap region
- near-UV region
- n-tab region
- ohmic contact region
- p region
- peripheral region
- periphery region
- polysilicon-on-охide region
- proton-damaged region
- proton implanted region
- reach-through region
- recessed охide region
- recombination region
- self-aligned regions
- shallow region
- shield region
- silicon-sapphire interface region
- softening region
- source region
- spreading-resistance region
- stack regions
- stepped-doping region
- storage region
- strip-like region
- strip-shaped region
- Strongly n-type region
- subcollector region
- subthreshold region
- superlattice region
- tank region
- terminating region
- thermally grown охide region
- transfer region
- transit-time region
- ultraviolet region
- V-groove region
- weak inversion region
- well region
- wide-gap region
См. также в других словарях:
Floating Gate — Ein Floating Gate Transistor ist ein spezieller Transistor, welcher in nichtflüchtigen Speichern zur permanenten Informationspeicherung eingesetzt wird. Er wurde 1967 von D. Kahng und S.M. Sze in den Bell Laboratories entwickelt [1] und stellt in … Deutsch Wikipedia
Floating-Gate — plūdrioji užtūra statusas T sritis radioelektronika atitikmenys: angl. floating gate vok. floatendes Gate, n; Floating Gate, n; schwimmendes Gate, n rus. плавающий затвор, m pranc. grille flottante, f … Radioelektronikos terminų žodynas
floating gate — plūdrioji užtūra statusas T sritis radioelektronika atitikmenys: angl. floating gate vok. floatendes Gate, n; Floating Gate, n; schwimmendes Gate, n rus. плавающий затвор, m pranc. grille flottante, f … Radioelektronikos terminų žodynas
Floating-gate transistor — The floating gate transistor is a kind of transistor that is commonly used for non volatile storage such as flash, EPROM and EEPROM memory. Floating gate transistors are almost always floating gate MOSFETs.Floating gate MOSFETs are useful because … Wikipedia
Floating-Gate-Transistor — Ein Floating Gate Transistor ist ein spezieller Transistor, der in nichtflüchtigen Speichern zur permanenten Informationspeicherung eingesetzt wird. Er wurde 1967 von Dawon Kahng und S.M. Sze in den Bell Laboratories entwickelt [1] und stellt in… … Deutsch Wikipedia
Floating Gate MOSFET — The Floating Gate MOSFET (FGMOS) is a field effect transistor, whose structure is similar to a conventional MOSFET. The gate of the FGMOS is electrically isolated, creating a floating node in DC, and a number of secondary gates or inputs are… … Wikipedia
floating-gate MOS — MOP darinys su plūdriąja užtūra statusas T sritis radioelektronika atitikmenys: angl. floating gate MOS; floating gate MOS structure vok. MOS Struktur mit schwebendem Gate, f rus. МОП структура с плавающим затвором, f pranc. structure MOS à… … Radioelektronikos terminų žodynas
floating-gate MOS structure — MOP darinys su plūdriąja užtūra statusas T sritis radioelektronika atitikmenys: angl. floating gate MOS; floating gate MOS structure vok. MOS Struktur mit schwebendem Gate, f rus. МОП структура с плавающим затвором, f pranc. structure MOS à… … Radioelektronikos terminų žodynas
floating-gate avalanche-injection MOS — griūtinės injekcijos MOP darinys su plūdriąja užtūra statusas T sritis radioelektronika atitikmenys: angl. floating gate avalanche injection MOS; floating gate avalanche injection MOS structure vok. MOS Struktur mit schwebendem Gate und… … Radioelektronikos terminų žodynas
floating-gate avalanche-injection MOS structure — griūtinės injekcijos MOP darinys su plūdriąja užtūra statusas T sritis radioelektronika atitikmenys: angl. floating gate avalanche injection MOS; floating gate avalanche injection MOS structure vok. MOS Struktur mit schwebendem Gate und… … Radioelektronikos terminų žodynas
Floating-Gate-Feldeffekttransistor — lauko tranzistorius su plūdriąja užtūra statusas T sritis radioelektronika atitikmenys: angl. floating gate field effect transistor vok. Floating Gate Feldeffekttransistor, m rus. полевой транзистор с плавающим затвором, m pranc. transistor à… … Radioelektronikos terminų žodynas